JPS6258675B2 - - Google Patents

Info

Publication number
JPS6258675B2
JPS6258675B2 JP57026241A JP2624182A JPS6258675B2 JP S6258675 B2 JPS6258675 B2 JP S6258675B2 JP 57026241 A JP57026241 A JP 57026241A JP 2624182 A JP2624182 A JP 2624182A JP S6258675 B2 JPS6258675 B2 JP S6258675B2
Authority
JP
Japan
Prior art keywords
film
hydrogen
amorphous
hydrogen concentration
hydrogenated silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57026241A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58142582A (ja
Inventor
Yosha Takeda
Shinji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57026241A priority Critical patent/JPS58142582A/ja
Publication of JPS58142582A publication Critical patent/JPS58142582A/ja
Publication of JPS6258675B2 publication Critical patent/JPS6258675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
JP57026241A 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜 Granted JPS58142582A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57026241A JPS58142582A (ja) 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57026241A JPS58142582A (ja) 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63233012A Division JPH01164074A (ja) 1988-09-16 1988-09-16 非晶質水素化シリコン光導電膜の製造方法

Publications (2)

Publication Number Publication Date
JPS58142582A JPS58142582A (ja) 1983-08-24
JPS6258675B2 true JPS6258675B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=12187800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57026241A Granted JPS58142582A (ja) 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜

Country Status (1)

Country Link
JP (1) JPS58142582A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6090342A (ja) * 1983-10-25 1985-05-21 Matsushita Electric Ind Co Ltd 光導電体の製造方法
US4855950A (en) * 1987-04-17 1989-08-08 Kanegafuchi Chemical Industry Company, Limited Optical storage apparatus including a reversible, doping modulated, multilayer, amorphous element
JP2535184B2 (ja) * 1987-10-29 1996-09-18 松下電器産業株式会社 光電変換装置

Also Published As

Publication number Publication date
JPS58142582A (ja) 1983-08-24

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