JPS5814069B2 - アルミニウム導体回路の安定化方法 - Google Patents

アルミニウム導体回路の安定化方法

Info

Publication number
JPS5814069B2
JPS5814069B2 JP54099950A JP9995079A JPS5814069B2 JP S5814069 B2 JPS5814069 B2 JP S5814069B2 JP 54099950 A JP54099950 A JP 54099950A JP 9995079 A JP9995079 A JP 9995079A JP S5814069 B2 JPS5814069 B2 JP S5814069B2
Authority
JP
Japan
Prior art keywords
aluminum
conductor circuits
aluminum conductor
stabilization method
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54099950A
Other languages
English (en)
Other versions
JPS5544794A (en
Inventor
ウエンーヨング・リー
ジエラルデイン・コギン・シユワルツ
ジエローム・マイケル・ウルドリツジ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5544794A publication Critical patent/JPS5544794A/ja
Publication of JPS5814069B2 publication Critical patent/JPS5814069B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/12—Oxidising using elemental oxygen or ozone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures

Description

【発明の詳細な説明】 本発明は反応性イオン食刻により形成されたアルミニウ
ム導体回路を安定化させるための方法に係る。
その安定化は酸素を含む雰囲気中に於て約２００℃及至
約４５０℃の温度で上記回路を加熱することによって達
成される。
当技術分野に於て、導体回路装置を反応性イオン食刻に
より形成することば周知である。
その様な方法を開示している比較的最近の特許の例とし
ては、米国特許第４０２８７４２号及び第４０５７４６
０号が挙げられる。
反応性イオン食刻に導体回路の形成に於て多くの利点を
有しているが、導体としオアルミニウムを基材とする回
路の場合には不利な点を有している。
反応性イオン食刻を施されたアルミニウムは反応性ガス
（例丙ば四塩化炭素）の原子（例えば塩素、炭素性が表
層に含まれるって時間が経つに従って腐食する傾向を有
している。
この腐食は回路に開放及び短絡な生ぜしめるので、明ら
かに大きな欠点である。
従来技術に於て、アルミニクムを含む合金を酸化雰囲気
中で処理することが開示されている。
米国特許第３４９６０３０号の明細書はヘリウムを含む
蒸気の雰囲気中に於てアルミニクム合金を処理すること
を開示している。
米国特許第３６６０１７３号明細書はアルミニウムを含
む鉄合金を酸化雰囲気中に於て１０００及至１４００℃
の温度で処理することを開示している。
本発明は、反応性イオン食刻により形成されたアルミニ
ウム導体回路に於ける開放又は短絡を防ぐための方法を
提供する。
アルミニウム被膜の導体回路を酸素を含む雰囲気中に於
て約２００℃及至約４５０℃の温度で加熱することによ
りアルミニウム導体回路の反応性原子を含む表層がＡｌ
２０に変成し上記回路に長期的安定性を与え得ることが
解った。
酸素雰囲気中に於で３５０℃で約３０分間加熱したとき
に最良の結果が得られた。
温度が約４５０℃を越えると、結果は余り好ましくない
。
本明細書及び特許請求の範囲に於で用いられている“ア
ルミニウム”なる用語は、アルミニウム及び主としてア
ルミニウムを含む合金を含んでいることを理解されたい
。
その様な合金は導体回路の形成に於て多数用いられてい
る。
例えば、４係の銅を含むアルミニウムの合金は多く用い
られている１例である。
又、銅及びシリコンを含むアルミニウムの合金も用いら
れている。
本発明による方法はその様な合金にも充分に適用され得
る。
次に、本発明による方法をその好実施例について更に詳
細に説明する。
４チの銅を含む厚さ略１μｍのアルミニウム合金の被膜
が、酸化されたシリコン・ウエハ基板上に真空付着によ
り形成された。
上記被膜は、シリコン・ダイオードの陰極を有する周波
数２７ＭＨｚのＴ−システム２極反応装置を用いて四塩
化炭素及びアルゴンのプラズマ中で反応性イオン食刻さ
れた。
入力電力密度は０．３５ワット／ｃｍ２であった。
全圧ＨＩＯμＨｇであり、活性ガスの圧力に２μＨｇで
あった。
フォトレジスト・マスクを用いて、厚さｌμｍのアルミ
ニウム被膜が導体回路にパターン化された。
この様にして形成されたアルミニウム導体回路が、酸素
雰囲気中に於て３５０℃の温度で３０分間加熱すること
によって安定化された。
本発明による方法に従って熱処理された試料は、処理さ
れなかった試料の場合よりも長い時間の間劣化に耐えて
、回路に開放又は短絡を何ら生じないことが解った。

Claims (1)

    【特許請求の範囲】
  1. １ 反応性イオン食刻により画成されたアルミニウムを
    主成分とする導体回路を、２００℃及至４５０℃の温度
    で酸素を含む雰囲気の下で、上記導体回路の反応性原子
    を含む表層を酸化アルミニウムに変成するに十分な時間
    加熱することからなる導体回路の安定化方法。
JP54099950A 1978-09-25 1979-08-07 アルミニウム導体回路の安定化方法 Expired JPS5814069B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/945,164 US4183781A (en) 1978-09-25 1978-09-25 Stabilization process for aluminum microcircuits which have been reactive-ion etched

Publications (2)

Publication Number Publication Date
JPS5544794A JPS5544794A (en) 1980-03-29
JPS5814069B2 true JPS5814069B2 (ja) 1983-03-17

Family

ID=25482734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54099950A Expired JPS5814069B2 (ja) 1978-09-25 1979-08-07 アルミニウム導体回路の安定化方法

Country Status (5)

Country Link
US (1) US4183781A (ja)
EP (1) EP0010138B1 (ja)
JP (1) JPS5814069B2 (ja)
CA (1) CA1114071A (ja)
DE (1) DE2964545D1 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649598A (en) * 1979-09-28 1981-05-06 Nippon Electric Co Element with multilayer conductor
US4282043A (en) * 1980-02-25 1981-08-04 International Business Machines Corporation Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other
US4325984B2 (en) * 1980-07-28 1998-03-03 Fairchild Camera & Inst Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors
JPS5747876A (en) * 1980-09-03 1982-03-18 Toshiba Corp Plasma etching apparatus and method
US4368220A (en) * 1981-06-30 1983-01-11 International Business Machines Corporation Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation
JPS59186326A (ja) * 1983-04-06 1984-10-23 Hitachi Ltd プラズマ処理装置
JPH0624190B2 (ja) * 1984-12-21 1994-03-30 株式会社東芝 配線形成方法
JPS62281331A (ja) * 1986-05-29 1987-12-07 Fujitsu Ltd エツチング方法
US5017513A (en) * 1989-01-18 1991-05-21 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device
JP2528962B2 (ja) * 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置
US5462892A (en) * 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
FR2720854B1 (fr) * 1993-12-28 1998-04-24 Fujitsu Ltd Procédé de fabrication de dispositifs à semiconducteurs dotés d'un câblage en aluminium par gravure et chauffage sous vide.
US5461008A (en) * 1994-05-26 1995-10-24 Delco Electronics Corporatinon Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
US20090050468A1 (en) * 2007-08-22 2009-02-26 Applied Materials, Inc. Controlled surface oxidation of aluminum interconnect

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298098A (ja) * 1962-09-20
US3496030A (en) * 1966-12-13 1970-02-17 Atomic Energy Commission Anti-seizing surfaces
JPS4945456B1 (ja) * 1969-06-25 1974-12-04
BE758258A (fr) * 1969-11-01 1971-04-01 Sumitomo Chemical Co Procede de depot d'aluminium
US4026742A (en) * 1972-11-22 1977-05-31 Katsuhiro Fujino Plasma etching process for making a microcircuit device
US3986897A (en) * 1974-09-30 1976-10-19 Motorola, Inc. Aluminum treatment to prevent hillocking
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
DE2539193C3 (de) * 1975-09-03 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
GB1499857A (en) * 1975-09-18 1978-02-01 Standard Telephones Cables Ltd Glow discharge etching
GB1544172A (en) * 1976-03-03 1979-04-11 Int Plasma Corp Gas plasma reactor and process
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
US4057460A (en) * 1976-11-22 1977-11-08 Data General Corporation Plasma etching process

Also Published As

Publication number Publication date
EP0010138B1 (en) 1983-01-19
JPS5544794A (en) 1980-03-29
EP0010138A1 (en) 1980-04-30
US4183781A (en) 1980-01-15
DE2964545D1 (en) 1983-02-24
CA1114071A (en) 1981-12-08

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