JPS58140130A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58140130A
JPS58140130A JP57023203A JP2320382A JPS58140130A JP S58140130 A JPS58140130 A JP S58140130A JP 57023203 A JP57023203 A JP 57023203A JP 2320382 A JP2320382 A JP 2320382A JP S58140130 A JPS58140130 A JP S58140130A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
insulator
phosphorus
semiconductor device
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57023203A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6343886B2 (enrdf_load_stackoverflow
Inventor
Yoshiaki Yadoiwa
宿岩　義昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57023203A priority Critical patent/JPS58140130A/ja
Publication of JPS58140130A publication Critical patent/JPS58140130A/ja
Publication of JPS6343886B2 publication Critical patent/JPS6343886B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57023203A 1982-02-16 1982-02-16 半導体装置の製造方法 Granted JPS58140130A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023203A JPS58140130A (ja) 1982-02-16 1982-02-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023203A JPS58140130A (ja) 1982-02-16 1982-02-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58140130A true JPS58140130A (ja) 1983-08-19
JPS6343886B2 JPS6343886B2 (enrdf_load_stackoverflow) 1988-09-01

Family

ID=12104105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023203A Granted JPS58140130A (ja) 1982-02-16 1982-02-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58140130A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237449A (ja) * 1985-04-12 1986-10-22 Ricoh Co Ltd 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133575A (en) * 1974-09-17 1976-03-22 Nippon Telegraph & Telephone Tasohaisenkozo
JPS53105385A (en) * 1977-02-25 1978-09-13 Fujitsu Ltd Manufacture for semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133575A (en) * 1974-09-17 1976-03-22 Nippon Telegraph & Telephone Tasohaisenkozo
JPS53105385A (en) * 1977-02-25 1978-09-13 Fujitsu Ltd Manufacture for semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237449A (ja) * 1985-04-12 1986-10-22 Ricoh Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6343886B2 (enrdf_load_stackoverflow) 1988-09-01

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