JPS58140130A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58140130A JPS58140130A JP2320382A JP2320382A JPS58140130A JP S58140130 A JPS58140130 A JP S58140130A JP 2320382 A JP2320382 A JP 2320382A JP 2320382 A JP2320382 A JP 2320382A JP S58140130 A JPS58140130 A JP S58140130A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- insulator
- phosphorus
- semiconductor device
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000012212 insulator Substances 0.000 claims abstract description 25
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 55
- 229910052698 phosphorus Inorganic materials 0.000 claims description 50
- 239000011574 phosphorus Substances 0.000 claims description 50
- 239000011521 glass Substances 0.000 claims description 41
- 238000001947 vapour-phase growth Methods 0.000 claims description 19
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 44
- 238000001259 photo etching Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 241000208140 Acer Species 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 241001474791 Proboscis Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2320382A JPS58140130A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2320382A JPS58140130A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58140130A true JPS58140130A (ja) | 1983-08-19 |
| JPS6343886B2 JPS6343886B2 (enrdf_load_stackoverflow) | 1988-09-01 |
Family
ID=12104105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2320382A Granted JPS58140130A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58140130A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61237449A (ja) * | 1985-04-12 | 1986-10-22 | Ricoh Co Ltd | 半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133575A (en) * | 1974-09-17 | 1976-03-22 | Nippon Telegraph & Telephone | Tasohaisenkozo |
| JPS53105385A (en) * | 1977-02-25 | 1978-09-13 | Fujitsu Ltd | Manufacture for semiconductor |
-
1982
- 1982-02-16 JP JP2320382A patent/JPS58140130A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133575A (en) * | 1974-09-17 | 1976-03-22 | Nippon Telegraph & Telephone | Tasohaisenkozo |
| JPS53105385A (en) * | 1977-02-25 | 1978-09-13 | Fujitsu Ltd | Manufacture for semiconductor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61237449A (ja) * | 1985-04-12 | 1986-10-22 | Ricoh Co Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6343886B2 (enrdf_load_stackoverflow) | 1988-09-01 |
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