JPS58139442A - 半導体装置の製造法 - Google Patents

半導体装置の製造法

Info

Publication number
JPS58139442A
JPS58139442A JP57021144A JP2114482A JPS58139442A JP S58139442 A JPS58139442 A JP S58139442A JP 57021144 A JP57021144 A JP 57021144A JP 2114482 A JP2114482 A JP 2114482A JP S58139442 A JPS58139442 A JP S58139442A
Authority
JP
Japan
Prior art keywords
layer
polysilicon
type
region
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57021144A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0462178B2 (enrdf_load_stackoverflow
Inventor
Akihisa Uchida
明久 内田
Nobuhiko Ono
大野 信彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57021144A priority Critical patent/JPS58139442A/ja
Publication of JPS58139442A publication Critical patent/JPS58139442A/ja
Publication of JPH0462178B2 publication Critical patent/JPH0462178B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57021144A 1982-02-15 1982-02-15 半導体装置の製造法 Granted JPS58139442A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57021144A JPS58139442A (ja) 1982-02-15 1982-02-15 半導体装置の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57021144A JPS58139442A (ja) 1982-02-15 1982-02-15 半導体装置の製造法

Publications (2)

Publication Number Publication Date
JPS58139442A true JPS58139442A (ja) 1983-08-18
JPH0462178B2 JPH0462178B2 (enrdf_load_stackoverflow) 1992-10-05

Family

ID=12046696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57021144A Granted JPS58139442A (ja) 1982-02-15 1982-02-15 半導体装置の製造法

Country Status (1)

Country Link
JP (1) JPS58139442A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376366A (ja) * 1986-09-18 1988-04-06 Nec Corp 半導体記憶装置とその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128861A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor integrated circuit device and method of fabricating the same
JPS5642367A (en) * 1979-09-14 1981-04-20 Toshiba Corp Manufacture of bipolar integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128861A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor integrated circuit device and method of fabricating the same
JPS5642367A (en) * 1979-09-14 1981-04-20 Toshiba Corp Manufacture of bipolar integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376366A (ja) * 1986-09-18 1988-04-06 Nec Corp 半導体記憶装置とその製造方法

Also Published As

Publication number Publication date
JPH0462178B2 (enrdf_load_stackoverflow) 1992-10-05

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