JPS58137181A - 半導体メモリ - Google Patents

半導体メモリ

Info

Publication number
JPS58137181A
JPS58137181A JP57017302A JP1730282A JPS58137181A JP S58137181 A JPS58137181 A JP S58137181A JP 57017302 A JP57017302 A JP 57017302A JP 1730282 A JP1730282 A JP 1730282A JP S58137181 A JPS58137181 A JP S58137181A
Authority
JP
Japan
Prior art keywords
transistor
drain
data
source
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57017302A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318275B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
岩橋　弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57017302A priority Critical patent/JPS58137181A/ja
Publication of JPS58137181A publication Critical patent/JPS58137181A/ja
Publication of JPH0318275B2 publication Critical patent/JPH0318275B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP57017302A 1982-02-05 1982-02-05 半導体メモリ Granted JPS58137181A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57017302A JPS58137181A (ja) 1982-02-05 1982-02-05 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57017302A JPS58137181A (ja) 1982-02-05 1982-02-05 半導体メモリ

Publications (2)

Publication Number Publication Date
JPS58137181A true JPS58137181A (ja) 1983-08-15
JPH0318275B2 JPH0318275B2 (enrdf_load_stackoverflow) 1991-03-12

Family

ID=11940204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57017302A Granted JPS58137181A (ja) 1982-02-05 1982-02-05 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS58137181A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136088A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体多値記憶装置
JPS61117796A (ja) * 1984-11-13 1986-06-05 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置
FR2630573A1 (fr) * 1988-04-26 1989-10-27 Sgs Thomson Microelectronics Memoire programmable electriquement avec plusieurs bits d'information par cellule
JP2002260391A (ja) * 2001-03-02 2002-09-13 Hitachi Ltd 半導体記憶装置及びその読み出し方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10199950B1 (en) 2013-07-02 2019-02-05 Vlt, Inc. Power distribution architecture with series-connected bus converter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381024A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Semiconductor memory divice
JPS54162934A (en) * 1978-06-13 1979-12-25 Ibm Read only memory
JPS5580888A (en) * 1978-12-12 1980-06-18 Nippon Telegr & Teleph Corp <Ntt> Read only memory circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381024A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Semiconductor memory divice
JPS54162934A (en) * 1978-06-13 1979-12-25 Ibm Read only memory
JPS5580888A (en) * 1978-12-12 1980-06-18 Nippon Telegr & Teleph Corp <Ntt> Read only memory circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136088A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体多値記憶装置
JPS61117796A (ja) * 1984-11-13 1986-06-05 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置
FR2630573A1 (fr) * 1988-04-26 1989-10-27 Sgs Thomson Microelectronics Memoire programmable electriquement avec plusieurs bits d'information par cellule
US4964079A (en) * 1988-04-26 1990-10-16 Sgs-Thomson Microelectronics Electrically programmable memory with several information bits per cell
JP2002260391A (ja) * 2001-03-02 2002-09-13 Hitachi Ltd 半導体記憶装置及びその読み出し方法

Also Published As

Publication number Publication date
JPH0318275B2 (enrdf_load_stackoverflow) 1991-03-12

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