JPS5381024A - Semiconductor memory divice - Google Patents

Semiconductor memory divice

Info

Publication number
JPS5381024A
JPS5381024A JP15836976A JP15836976A JPS5381024A JP S5381024 A JPS5381024 A JP S5381024A JP 15836976 A JP15836976 A JP 15836976A JP 15836976 A JP15836976 A JP 15836976A JP S5381024 A JPS5381024 A JP S5381024A
Authority
JP
Japan
Prior art keywords
semiconductor memory
information
divice
memory divice
varied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15836976A
Other languages
Japanese (ja)
Other versions
JPS5846798B2 (en
Inventor
Shigenobu Taira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP51158369A priority Critical patent/JPS5846798B2/en
Publication of JPS5381024A publication Critical patent/JPS5381024A/en
Publication of JPS5846798B2 publication Critical patent/JPS5846798B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:The treshold level of the MOS transistor constituting a memory cell can be varied in a stage shape and one of many pieces of information can by also written selectively, so that the memory capacity can be expanded greatly and a large amount of information can be stored in a small area.
JP51158369A 1976-12-27 1976-12-27 semiconductor storage device Expired JPS5846798B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51158369A JPS5846798B2 (en) 1976-12-27 1976-12-27 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51158369A JPS5846798B2 (en) 1976-12-27 1976-12-27 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5381024A true JPS5381024A (en) 1978-07-18
JPS5846798B2 JPS5846798B2 (en) 1983-10-18

Family

ID=15670177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51158369A Expired JPS5846798B2 (en) 1976-12-27 1976-12-27 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5846798B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580888A (en) * 1978-12-12 1980-06-18 Nippon Telegr & Teleph Corp <Ntt> Read only memory circuit
JPS55500925A (en) * 1978-11-20 1980-11-06
JPS58137181A (en) * 1982-02-05 1983-08-15 Toshiba Corp Semiconductor memory
US5668752A (en) * 1995-03-31 1997-09-16 Nec Corporation Multi-stage ROM wherein a cell current of a selected memory cell is compared with a plurality of constant currents when driven to read voltages
US5721701A (en) * 1995-04-28 1998-02-24 Nec Corporation High read speed multivalued read only memory device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55500925A (en) * 1978-11-20 1980-11-06
JPS5580888A (en) * 1978-12-12 1980-06-18 Nippon Telegr & Teleph Corp <Ntt> Read only memory circuit
JPS58137181A (en) * 1982-02-05 1983-08-15 Toshiba Corp Semiconductor memory
JPH0318275B2 (en) * 1982-02-05 1991-03-12 Tokyo Shibaura Electric Co
US5668752A (en) * 1995-03-31 1997-09-16 Nec Corporation Multi-stage ROM wherein a cell current of a selected memory cell is compared with a plurality of constant currents when driven to read voltages
US5721701A (en) * 1995-04-28 1998-02-24 Nec Corporation High read speed multivalued read only memory device

Also Published As

Publication number Publication date
JPS5846798B2 (en) 1983-10-18

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