JPS534483A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS534483A
JPS534483A JP7781776A JP7781776A JPS534483A JP S534483 A JPS534483 A JP S534483A JP 7781776 A JP7781776 A JP 7781776A JP 7781776 A JP7781776 A JP 7781776A JP S534483 A JPS534483 A JP S534483A
Authority
JP
Japan
Prior art keywords
semiconductor memory
integration
density
reduce
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7781776A
Other languages
Japanese (ja)
Inventor
Mitsumasa Koyanagi
Kikuji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7781776A priority Critical patent/JPS534483A/en
Publication of JPS534483A publication Critical patent/JPS534483A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce the area of memory cells and increase the density of integration of semiconductor memories by three-dimensionally configuring storage capacities.
JP7781776A 1976-07-02 1976-07-02 Semiconductor memory Pending JPS534483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7781776A JPS534483A (en) 1976-07-02 1976-07-02 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7781776A JPS534483A (en) 1976-07-02 1976-07-02 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS534483A true JPS534483A (en) 1978-01-17

Family

ID=13644569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7781776A Pending JPS534483A (en) 1976-07-02 1976-07-02 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS534483A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121480A (en) * 1977-02-03 1978-10-23 Texas Instruments Inc Mos memory cell and method of producing same
US4475118A (en) * 1978-12-21 1984-10-02 National Semiconductor Corporation Dynamic MOS RAM with storage cells having a mainly insulated first plate
US4498853A (en) * 1979-12-14 1985-02-12 Nippon Piston Ring Co., Ltd. Vane-type compressor
JPS61244061A (en) * 1985-04-22 1986-10-30 Toshiba Corp Semiconductor memory device
JPS63148A (en) * 1986-06-19 1988-01-05 Mitsubishi Electric Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290279A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Mos memory device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121480A (en) * 1977-02-03 1978-10-23 Texas Instruments Inc Mos memory cell and method of producing same
JPS5856266B2 (en) * 1977-02-03 1983-12-14 テキサス インスツルメンツ インコ−ポレイテツド MOS memory
US4475118A (en) * 1978-12-21 1984-10-02 National Semiconductor Corporation Dynamic MOS RAM with storage cells having a mainly insulated first plate
US4498853A (en) * 1979-12-14 1985-02-12 Nippon Piston Ring Co., Ltd. Vane-type compressor
JPS61244061A (en) * 1985-04-22 1986-10-30 Toshiba Corp Semiconductor memory device
JPS63148A (en) * 1986-06-19 1988-01-05 Mitsubishi Electric Corp Semiconductor device

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