JPS534483A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS534483A JPS534483A JP7781776A JP7781776A JPS534483A JP S534483 A JPS534483 A JP S534483A JP 7781776 A JP7781776 A JP 7781776A JP 7781776 A JP7781776 A JP 7781776A JP S534483 A JPS534483 A JP S534483A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- integration
- density
- reduce
- increase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015654 memory Effects 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To reduce the area of memory cells and increase the density of integration of semiconductor memories by three-dimensionally configuring storage capacities.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7781776A JPS534483A (en) | 1976-07-02 | 1976-07-02 | Semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7781776A JPS534483A (en) | 1976-07-02 | 1976-07-02 | Semiconductor memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS534483A true JPS534483A (en) | 1978-01-17 |
Family
ID=13644569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7781776A Pending JPS534483A (en) | 1976-07-02 | 1976-07-02 | Semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS534483A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53121480A (en) * | 1977-02-03 | 1978-10-23 | Texas Instruments Inc | Mos memory cell and method of producing same |
US4475118A (en) * | 1978-12-21 | 1984-10-02 | National Semiconductor Corporation | Dynamic MOS RAM with storage cells having a mainly insulated first plate |
US4498853A (en) * | 1979-12-14 | 1985-02-12 | Nippon Piston Ring Co., Ltd. | Vane-type compressor |
JPS61244061A (en) * | 1985-04-22 | 1986-10-30 | Toshiba Corp | Semiconductor memory device |
JPS63148A (en) * | 1986-06-19 | 1988-01-05 | Mitsubishi Electric Corp | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290279A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Mos memory device |
-
1976
- 1976-07-02 JP JP7781776A patent/JPS534483A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290279A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Mos memory device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53121480A (en) * | 1977-02-03 | 1978-10-23 | Texas Instruments Inc | Mos memory cell and method of producing same |
JPS5856266B2 (en) * | 1977-02-03 | 1983-12-14 | テキサス インスツルメンツ インコ−ポレイテツド | MOS memory |
US4475118A (en) * | 1978-12-21 | 1984-10-02 | National Semiconductor Corporation | Dynamic MOS RAM with storage cells having a mainly insulated first plate |
US4498853A (en) * | 1979-12-14 | 1985-02-12 | Nippon Piston Ring Co., Ltd. | Vane-type compressor |
JPS61244061A (en) * | 1985-04-22 | 1986-10-30 | Toshiba Corp | Semiconductor memory device |
JPS63148A (en) * | 1986-06-19 | 1988-01-05 | Mitsubishi Electric Corp | Semiconductor device |
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