JPS58134427A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58134427A
JPS58134427A JP57017362A JP1736282A JPS58134427A JP S58134427 A JPS58134427 A JP S58134427A JP 57017362 A JP57017362 A JP 57017362A JP 1736282 A JP1736282 A JP 1736282A JP S58134427 A JPS58134427 A JP S58134427A
Authority
JP
Japan
Prior art keywords
film
silicon
melting point
point metal
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57017362A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0154853B2 (enFirst
Inventor
Hidekazu Okabayashi
岡林　秀和
Eiji Nagasawa
長澤　英二
Mitsutaka Morimoto
光孝 森本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57017362A priority Critical patent/JPS58134427A/ja
Publication of JPS58134427A publication Critical patent/JPS58134427A/ja
Publication of JPH0154853B2 publication Critical patent/JPH0154853B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP57017362A 1982-02-05 1982-02-05 半導体装置の製造方法 Granted JPS58134427A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57017362A JPS58134427A (ja) 1982-02-05 1982-02-05 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57017362A JPS58134427A (ja) 1982-02-05 1982-02-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58134427A true JPS58134427A (ja) 1983-08-10
JPH0154853B2 JPH0154853B2 (enFirst) 1989-11-21

Family

ID=11941917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57017362A Granted JPS58134427A (ja) 1982-02-05 1982-02-05 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58134427A (enFirst)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61274325A (ja) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6242524A (ja) * 1985-08-20 1987-02-24 Fujitsu Ltd 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158454A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158454A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61274325A (ja) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6242524A (ja) * 1985-08-20 1987-02-24 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0154853B2 (enFirst) 1989-11-21

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