JPS58133932U - 化合物半導体の気相成長装置 - Google Patents

化合物半導体の気相成長装置

Info

Publication number
JPS58133932U
JPS58133932U JP3066082U JP3066082U JPS58133932U JP S58133932 U JPS58133932 U JP S58133932U JP 3066082 U JP3066082 U JP 3066082U JP 3066082 U JP3066082 U JP 3066082U JP S58133932 U JPS58133932 U JP S58133932U
Authority
JP
Japan
Prior art keywords
vapor phase
compound semiconductor
phase growth
semiconductor vapor
growth equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3066082U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510351Y2 (enExample
Inventor
修 青木
純次 米野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3066082U priority Critical patent/JPS58133932U/ja
Publication of JPS58133932U publication Critical patent/JPS58133932U/ja
Application granted granted Critical
Publication of JPH0510351Y2 publication Critical patent/JPH0510351Y2/ja
Granted legal-status Critical Current

Links

JP3066082U 1982-03-04 1982-03-04 化合物半導体の気相成長装置 Granted JPS58133932U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3066082U JPS58133932U (ja) 1982-03-04 1982-03-04 化合物半導体の気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3066082U JPS58133932U (ja) 1982-03-04 1982-03-04 化合物半導体の気相成長装置

Publications (2)

Publication Number Publication Date
JPS58133932U true JPS58133932U (ja) 1983-09-09
JPH0510351Y2 JPH0510351Y2 (enExample) 1993-03-15

Family

ID=30042362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3066082U Granted JPS58133932U (ja) 1982-03-04 1982-03-04 化合物半導体の気相成長装置

Country Status (1)

Country Link
JP (1) JPS58133932U (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544066A (en) * 1977-06-13 1979-01-12 Hitachi Ltd Growing method of silicon crystal under low pressure
JPS5698823A (en) * 1980-01-09 1981-08-08 Nec Corp Method of vapor growth of semiconductor of 3-5 group compound

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544066A (en) * 1977-06-13 1979-01-12 Hitachi Ltd Growing method of silicon crystal under low pressure
JPS5698823A (en) * 1980-01-09 1981-08-08 Nec Corp Method of vapor growth of semiconductor of 3-5 group compound

Also Published As

Publication number Publication date
JPH0510351Y2 (enExample) 1993-03-15

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