JPS58124261A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58124261A
JPS58124261A JP57007927A JP792782A JPS58124261A JP S58124261 A JPS58124261 A JP S58124261A JP 57007927 A JP57007927 A JP 57007927A JP 792782 A JP792782 A JP 792782A JP S58124261 A JPS58124261 A JP S58124261A
Authority
JP
Japan
Prior art keywords
semiconductor
film
field
insulating film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57007927A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6242391B2 (enrdf_load_stackoverflow
Inventor
Kenji Maeguchi
前口　賢二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57007927A priority Critical patent/JPS58124261A/ja
Publication of JPS58124261A publication Critical patent/JPS58124261A/ja
Publication of JPS6242391B2 publication Critical patent/JPS6242391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57007927A 1982-01-21 1982-01-21 半導体装置 Granted JPS58124261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57007927A JPS58124261A (ja) 1982-01-21 1982-01-21 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57007927A JPS58124261A (ja) 1982-01-21 1982-01-21 半導体装置

Publications (2)

Publication Number Publication Date
JPS58124261A true JPS58124261A (ja) 1983-07-23
JPS6242391B2 JPS6242391B2 (enrdf_load_stackoverflow) 1987-09-08

Family

ID=11679152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57007927A Granted JPS58124261A (ja) 1982-01-21 1982-01-21 半導体装置

Country Status (1)

Country Link
JP (1) JPS58124261A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62203359A (ja) * 1986-03-03 1987-09-08 Mitsubishi Electric Corp 積層型半導体装置およびその製造方法
JPH0594666A (ja) * 1991-08-29 1993-04-16 S K C:Kk 名刺を用いた情報提供装置
JPH0613575A (ja) * 1990-07-31 1994-01-21 Internatl Business Mach Corp <Ibm> スタック形半導体構造体及びその形成方法
US5550390A (en) * 1991-08-08 1996-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5606186A (en) * 1993-12-20 1997-02-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit
US5859444A (en) * 1991-08-08 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62203359A (ja) * 1986-03-03 1987-09-08 Mitsubishi Electric Corp 積層型半導体装置およびその製造方法
US4902637A (en) * 1986-03-03 1990-02-20 Mitsubishi Denki Kabushiki Kaisha Method for producing a three-dimensional type semiconductor device
JPH0613575A (ja) * 1990-07-31 1994-01-21 Internatl Business Mach Corp <Ibm> スタック形半導体構造体及びその形成方法
US5550390A (en) * 1991-08-08 1996-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
US5859444A (en) * 1991-08-08 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPH0594666A (ja) * 1991-08-29 1993-04-16 S K C:Kk 名刺を用いた情報提供装置
US5606186A (en) * 1993-12-20 1997-02-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6242391B2 (enrdf_load_stackoverflow) 1987-09-08

Similar Documents

Publication Publication Date Title
JPS58212164A (ja) バイポ−ラメモリセル
JPS5937867B2 (ja) 半導体装置およびその製造方法
JPS58124261A (ja) 半導体装置
JP2859789B2 (ja) フォトダイオードアレイおよびその製法
JPS61502925A (ja) Ｍｉｓ型集積回路の製造方法
JPH0467671A (ja) 半導体装置の製造方法
JP3307481B2 (ja) 半導体装置
JPH0563189A (ja) 集積回路構成体製造方法
JPS59161060A (ja) 半導体デバイスの製造方法
US4772568A (en) Method of making integrated circuit with pair of MOS field effect transistors sharing a common source/drain region
JPH0322694B2 (enrdf_load_stackoverflow)
JPS58206158A (ja) 半導体装置の製造方法
JP2822382B2 (ja) 半導体装置及びその製造方法
JPS6240765A (ja) 読み出し専用半導体記憶装置およびその製造方法
JPS6072242A (ja) 半導体装置の製造方法
JP3703427B2 (ja) Ｍｏｓ電界効果トランジスタ
JPS5935464A (ja) 相補型ｍｏｓ半導体装置及びその製造方法
JPS62115860A (ja) 縦方向に集積化した半導体装置を形成する方法
JP2556155B2 (ja) 半導体装置の製造方法
JPH0738412B2 (ja) 半導体装置およびその製造方法
JP3475107B2 (ja) 半導体装置の製造方法
JPS5982760A (ja) 相補型半導体集積回路装置
JPS59154072A (ja) 半導体装置及びその製造方法
JPS58147028A (ja) 半導体装置の製造方法
JPS5878464A (ja) 半導体装置の製造方法