JPS58119651A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JPS58119651A JPS58119651A JP172682A JP172682A JPS58119651A JP S58119651 A JPS58119651 A JP S58119651A JP 172682 A JP172682 A JP 172682A JP 172682 A JP172682 A JP 172682A JP S58119651 A JPS58119651 A JP S58119651A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive material
- wiring
- layer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 27
- 238000002955 isolation Methods 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000011259 mixed solution Substances 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP172682A JPS58119651A (ja) | 1982-01-11 | 1982-01-11 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP172682A JPS58119651A (ja) | 1982-01-11 | 1982-01-11 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119651A true JPS58119651A (ja) | 1983-07-16 |
| JPH0113225B2 JPH0113225B2 (enrdf_load_stackoverflow) | 1989-03-03 |
Family
ID=11509563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP172682A Granted JPS58119651A (ja) | 1982-01-11 | 1982-01-11 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119651A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02224357A (ja) * | 1989-02-27 | 1990-09-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840525A (enrdf_load_stackoverflow) * | 1971-09-21 | 1973-06-14 | ||
| JPS50151711A (enrdf_load_stackoverflow) * | 1974-04-29 | 1975-12-05 | ||
| JPS5212545A (en) * | 1975-07-21 | 1977-01-31 | Hitachi Ltd | Mos push-pull circuit |
| JPS5340278A (en) * | 1976-09-27 | 1978-04-12 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5427292A (en) * | 1977-08-01 | 1979-03-01 | Kendall & Co | Container |
| JPS5511354A (en) * | 1978-07-12 | 1980-01-26 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor |
| JPS55131159A (en) * | 1979-03-30 | 1980-10-11 | Sumitomo Metal Ind Ltd | High tensile low alloy steel for steel pipe |
-
1982
- 1982-01-11 JP JP172682A patent/JPS58119651A/ja active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840525A (enrdf_load_stackoverflow) * | 1971-09-21 | 1973-06-14 | ||
| JPS50151711A (enrdf_load_stackoverflow) * | 1974-04-29 | 1975-12-05 | ||
| JPS5212545A (en) * | 1975-07-21 | 1977-01-31 | Hitachi Ltd | Mos push-pull circuit |
| JPS5340278A (en) * | 1976-09-27 | 1978-04-12 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5427292A (en) * | 1977-08-01 | 1979-03-01 | Kendall & Co | Container |
| JPS5511354A (en) * | 1978-07-12 | 1980-01-26 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor |
| JPS55131159A (en) * | 1979-03-30 | 1980-10-11 | Sumitomo Metal Ind Ltd | High tensile low alloy steel for steel pipe |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02224357A (ja) * | 1989-02-27 | 1990-09-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0113225B2 (enrdf_load_stackoverflow) | 1989-03-03 |
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