JPS58116532A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS58116532A
JPS58116532A JP56214813A JP21481381A JPS58116532A JP S58116532 A JPS58116532 A JP S58116532A JP 56214813 A JP56214813 A JP 56214813A JP 21481381 A JP21481381 A JP 21481381A JP S58116532 A JPS58116532 A JP S58116532A
Authority
JP
Japan
Prior art keywords
polymer
crosslinking group
host
crosslinking
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56214813A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0262859B2 (enExample
Inventor
Kazuo Toda
和男 戸田
Katsuhiro Fujino
藤野　勝裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56214813A priority Critical patent/JPS58116532A/ja
Publication of JPS58116532A publication Critical patent/JPS58116532A/ja
Publication of JPH0262859B2 publication Critical patent/JPH0262859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP56214813A 1981-12-29 1981-12-29 パタ−ン形成方法 Granted JPS58116532A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56214813A JPS58116532A (ja) 1981-12-29 1981-12-29 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56214813A JPS58116532A (ja) 1981-12-29 1981-12-29 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58116532A true JPS58116532A (ja) 1983-07-11
JPH0262859B2 JPH0262859B2 (enExample) 1990-12-26

Family

ID=16661941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56214813A Granted JPS58116532A (ja) 1981-12-29 1981-12-29 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58116532A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026337A (ja) * 1983-07-22 1985-02-09 Fujitsu Ltd パタ−ン形成方法
JPS6029745A (ja) * 1983-07-28 1985-02-15 Fujitsu Ltd パタ−ン形成方法
JPS6070442A (ja) * 1983-09-28 1985-04-22 Fujitsu Ltd パタ−ン形成方法
JPS6073536A (ja) * 1983-09-30 1985-04-25 Fujitsu Ltd パタ−ン形成方法
JPS60117244A (ja) * 1983-11-30 1985-06-24 Fujitsu Ltd パタ−ン形成方法
JPS63291053A (ja) * 1987-05-25 1988-11-28 Nippon Zeon Co Ltd ポジ型フォトレジスト組成物
JPS63291052A (ja) * 1987-05-25 1988-11-28 Nippon Zeon Co Ltd ポジ型フォトレジスト組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133042A (en) * 1979-04-04 1980-10-16 Fujitsu Ltd Pattern forming method
JPS5664337A (en) * 1979-10-29 1981-06-01 Matsushita Electric Ind Co Ltd Radiation resist material and radiation resist pattern forming method
JPS56128941A (en) * 1980-03-14 1981-10-08 Mitsubishi Rayon Co Ltd Resin composition for positive type resist
JPS57161743A (en) * 1981-03-12 1982-10-05 Philips Nv Method of applying resist pattern on substrate and resist material mixture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55133042A (en) * 1979-04-04 1980-10-16 Fujitsu Ltd Pattern forming method
JPS5664337A (en) * 1979-10-29 1981-06-01 Matsushita Electric Ind Co Ltd Radiation resist material and radiation resist pattern forming method
JPS56128941A (en) * 1980-03-14 1981-10-08 Mitsubishi Rayon Co Ltd Resin composition for positive type resist
JPS57161743A (en) * 1981-03-12 1982-10-05 Philips Nv Method of applying resist pattern on substrate and resist material mixture

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026337A (ja) * 1983-07-22 1985-02-09 Fujitsu Ltd パタ−ン形成方法
JPS6029745A (ja) * 1983-07-28 1985-02-15 Fujitsu Ltd パタ−ン形成方法
JPS6070442A (ja) * 1983-09-28 1985-04-22 Fujitsu Ltd パタ−ン形成方法
JPS6073536A (ja) * 1983-09-30 1985-04-25 Fujitsu Ltd パタ−ン形成方法
JPS60117244A (ja) * 1983-11-30 1985-06-24 Fujitsu Ltd パタ−ン形成方法
JPS63291053A (ja) * 1987-05-25 1988-11-28 Nippon Zeon Co Ltd ポジ型フォトレジスト組成物
JPS63291052A (ja) * 1987-05-25 1988-11-28 Nippon Zeon Co Ltd ポジ型フォトレジスト組成物

Also Published As

Publication number Publication date
JPH0262859B2 (enExample) 1990-12-26

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