JPS58115834A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58115834A
JPS58115834A JP56210182A JP21018281A JPS58115834A JP S58115834 A JPS58115834 A JP S58115834A JP 56210182 A JP56210182 A JP 56210182A JP 21018281 A JP21018281 A JP 21018281A JP S58115834 A JPS58115834 A JP S58115834A
Authority
JP
Japan
Prior art keywords
film
wiring
thickness
insulating film
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56210182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6248380B2 (OSRAM
Inventor
Yasushi Okuyama
奥山　泰史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56210182A priority Critical patent/JPS58115834A/ja
Publication of JPS58115834A publication Critical patent/JPS58115834A/ja
Publication of JPS6248380B2 publication Critical patent/JPS6248380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/662—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56210182A 1981-12-29 1981-12-29 半導体装置の製造方法 Granted JPS58115834A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56210182A JPS58115834A (ja) 1981-12-29 1981-12-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56210182A JPS58115834A (ja) 1981-12-29 1981-12-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58115834A true JPS58115834A (ja) 1983-07-09
JPS6248380B2 JPS6248380B2 (OSRAM) 1987-10-13

Family

ID=16585134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56210182A Granted JPS58115834A (ja) 1981-12-29 1981-12-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58115834A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196555A (ja) * 1985-02-26 1986-08-30 Nec Corp 多層配線の形成方法
JPS6324643A (ja) * 1986-07-17 1988-02-02 Nec Kyushu Ltd 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425178A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture for semiconductor device
JPS54103674A (en) * 1978-02-01 1979-08-15 Nec Corp Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425178A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture for semiconductor device
JPS54103674A (en) * 1978-02-01 1979-08-15 Nec Corp Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196555A (ja) * 1985-02-26 1986-08-30 Nec Corp 多層配線の形成方法
JPS6324643A (ja) * 1986-07-17 1988-02-02 Nec Kyushu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6248380B2 (OSRAM) 1987-10-13

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