JPS58114428A - 微細パタ−ン形成方法 - Google Patents

微細パタ−ン形成方法

Info

Publication number
JPS58114428A
JPS58114428A JP56210335A JP21033581A JPS58114428A JP S58114428 A JPS58114428 A JP S58114428A JP 56210335 A JP56210335 A JP 56210335A JP 21033581 A JP21033581 A JP 21033581A JP S58114428 A JPS58114428 A JP S58114428A
Authority
JP
Japan
Prior art keywords
film
pattern
layer
mask
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56210335A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055165B2 (cg-RX-API-DMAC10.html
Inventor
Koichi Okada
浩一 岡田
Hisanao Tsuge
久尚 柘植
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56210335A priority Critical patent/JPS58114428A/ja
Publication of JPS58114428A publication Critical patent/JPS58114428A/ja
Publication of JPH055165B2 publication Critical patent/JPH055165B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/20—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56210335A 1981-12-28 1981-12-28 微細パタ−ン形成方法 Granted JPS58114428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56210335A JPS58114428A (ja) 1981-12-28 1981-12-28 微細パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56210335A JPS58114428A (ja) 1981-12-28 1981-12-28 微細パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58114428A true JPS58114428A (ja) 1983-07-07
JPH055165B2 JPH055165B2 (cg-RX-API-DMAC10.html) 1993-01-21

Family

ID=16587704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56210335A Granted JPS58114428A (ja) 1981-12-28 1981-12-28 微細パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58114428A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107836A (ja) * 1983-10-22 1985-06-13 インターナシヨナル　スタンダード　エレクトリツク　コーポレイシヨン パターン形成方法
JPS60147133A (ja) * 1983-12-29 1985-08-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体基板内に溝を形成する方法
US7731860B2 (en) 2003-04-03 2010-06-08 Microemissive Displays Limited Ion beam method for removing an organic light emitting material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107836A (ja) * 1983-10-22 1985-06-13 インターナシヨナル　スタンダード　エレクトリツク　コーポレイシヨン パターン形成方法
JPS60147133A (ja) * 1983-12-29 1985-08-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体基板内に溝を形成する方法
US7731860B2 (en) 2003-04-03 2010-06-08 Microemissive Displays Limited Ion beam method for removing an organic light emitting material

Also Published As

Publication number Publication date
JPH055165B2 (cg-RX-API-DMAC10.html) 1993-01-21

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