JPS58112372A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58112372A
JPS58112372A JP21051381A JP21051381A JPS58112372A JP S58112372 A JPS58112372 A JP S58112372A JP 21051381 A JP21051381 A JP 21051381A JP 21051381 A JP21051381 A JP 21051381A JP S58112372 A JPS58112372 A JP S58112372A
Authority
JP
Japan
Prior art keywords
film
mask
semiconductor substrate
region
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21051381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH024138B2 (enrdf_load_stackoverflow
Inventor
Naoki Yokoyama
直樹 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21051381A priority Critical patent/JPS58112372A/ja
Publication of JPS58112372A publication Critical patent/JPS58112372A/ja
Publication of JPH024138B2 publication Critical patent/JPH024138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP21051381A 1981-12-26 1981-12-26 半導体装置の製造方法 Granted JPS58112372A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21051381A JPS58112372A (ja) 1981-12-26 1981-12-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21051381A JPS58112372A (ja) 1981-12-26 1981-12-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58112372A true JPS58112372A (ja) 1983-07-04
JPH024138B2 JPH024138B2 (enrdf_load_stackoverflow) 1990-01-26

Family

ID=16590611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21051381A Granted JPS58112372A (ja) 1981-12-26 1981-12-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58112372A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849620A (en) * 1995-10-18 1998-12-15 Abb Research Ltd. Method for producing a semiconductor device comprising an implantation step

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849620A (en) * 1995-10-18 1998-12-15 Abb Research Ltd. Method for producing a semiconductor device comprising an implantation step

Also Published As

Publication number Publication date
JPH024138B2 (enrdf_load_stackoverflow) 1990-01-26

Similar Documents

Publication Publication Date Title
JPS6310589B2 (enrdf_load_stackoverflow)
US4700455A (en) Method of fabricating Schottky gate-type GaAs field effect transistor
JPS58112372A (ja) 半導体装置の製造方法
JPS594083A (ja) 半導体装置の製造方法
JPH04282841A (ja) 半導体装置の製造方法
JPS6190470A (ja) 化合物半導体装置の製造方法
JPS6347982A (ja) 半導体装置
JP3139208B2 (ja) 電界効果トランジスタの製造方法
JP2682032B2 (ja) 半導体装置の製造方法
JP2667840B2 (ja) 化合物半導体装置の製造方法
JP2796303B2 (ja) 半導体集積回路の製造方法
JPS5893290A (ja) シヨツトキバリア電界効果トランジスタの製造方法
JPS6070772A (ja) 電界効果トランジスタの製造方法
JPS61150379A (ja) 半導体装置の製造方法
JPS60234373A (ja) 半導体装置の製造方法
JPS58145161A (ja) 半導体装置の製造方法
JPS59110171A (ja) 半導体装置の製造方法
JPS63222461A (ja) シヨツトキ−障壁ゲ−ト電界効果トランジスタ及びその製造方法
JPH01208870A (ja) 化合物半導体装置の製造方法
JPS59123269A (ja) 半導体装置の製造方法
JPH0783026B2 (ja) 電界効果トランジスタの製造方法
JPH09293735A (ja) 電界効果トランジスタの製造方法
GB2273202A (en) Field effect transistor
JPH0353773B2 (enrdf_load_stackoverflow)
JPH0322696B2 (enrdf_load_stackoverflow)