JPS58105568A - カラ−イメ−ジ長尺センサ - Google Patents

カラ−イメ−ジ長尺センサ

Info

Publication number
JPS58105568A
JPS58105568A JP56201236A JP20123681A JPS58105568A JP S58105568 A JPS58105568 A JP S58105568A JP 56201236 A JP56201236 A JP 56201236A JP 20123681 A JP20123681 A JP 20123681A JP S58105568 A JPS58105568 A JP S58105568A
Authority
JP
Japan
Prior art keywords
layer
color image
amorphous silicon
image sensor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56201236A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6230708B2 (enExample
Inventor
Nobuyoshi Takagi
高城　信義
Kiyoshi Ozawa
清 小沢
Satoru Kawai
悟 川井
Toshiro Kodama
敏郎 児玉
Koichi Hiranaka
弘一 平中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56201236A priority Critical patent/JPS58105568A/ja
Publication of JPS58105568A publication Critical patent/JPS58105568A/ja
Publication of JPS6230708B2 publication Critical patent/JPS6230708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP56201236A 1981-12-14 1981-12-14 カラ−イメ−ジ長尺センサ Granted JPS58105568A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56201236A JPS58105568A (ja) 1981-12-14 1981-12-14 カラ−イメ−ジ長尺センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56201236A JPS58105568A (ja) 1981-12-14 1981-12-14 カラ−イメ−ジ長尺センサ

Publications (2)

Publication Number Publication Date
JPS58105568A true JPS58105568A (ja) 1983-06-23
JPS6230708B2 JPS6230708B2 (enExample) 1987-07-03

Family

ID=16437590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56201236A Granted JPS58105568A (ja) 1981-12-14 1981-12-14 カラ−イメ−ジ長尺センサ

Country Status (1)

Country Link
JP (1) JPS58105568A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239055A (ja) * 1984-05-11 1985-11-27 Sanyo Electric Co Ltd アモルフアスシリコン光センサ
JPS6315462A (ja) * 1986-07-07 1988-01-22 Nippon Sheet Glass Co Ltd イメ−ジセンサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60239055A (ja) * 1984-05-11 1985-11-27 Sanyo Electric Co Ltd アモルフアスシリコン光センサ
JPS6315462A (ja) * 1986-07-07 1988-01-22 Nippon Sheet Glass Co Ltd イメ−ジセンサ

Also Published As

Publication number Publication date
JPS6230708B2 (enExample) 1987-07-03

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