JPS58102584A - 半導体の加工方法 - Google Patents

半導体の加工方法

Info

Publication number
JPS58102584A
JPS58102584A JP20018681A JP20018681A JPS58102584A JP S58102584 A JPS58102584 A JP S58102584A JP 20018681 A JP20018681 A JP 20018681A JP 20018681 A JP20018681 A JP 20018681A JP S58102584 A JPS58102584 A JP S58102584A
Authority
JP
Japan
Prior art keywords
crystal
inp
type
mesa structure
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20018681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0365668B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yoshinori Nakayama
義則 中山
Motonao Hirao
平尾 元尚
Shinji Tsuji
伸二 辻
Takao Mori
孝夫 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20018681A priority Critical patent/JPS58102584A/ja
Publication of JPS58102584A publication Critical patent/JPS58102584A/ja
Publication of JPH0365668B2 publication Critical patent/JPH0365668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer
    • H01S5/2275Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
JP20018681A 1981-12-14 1981-12-14 半導体の加工方法 Granted JPS58102584A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20018681A JPS58102584A (ja) 1981-12-14 1981-12-14 半導体の加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20018681A JPS58102584A (ja) 1981-12-14 1981-12-14 半導体の加工方法

Publications (2)

Publication Number Publication Date
JPS58102584A true JPS58102584A (ja) 1983-06-18
JPH0365668B2 JPH0365668B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-10-14

Family

ID=16420220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20018681A Granted JPS58102584A (ja) 1981-12-14 1981-12-14 半導体の加工方法

Country Status (1)

Country Link
JP (1) JPS58102584A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPH0365668B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-10-14

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