JPS58100684A - ドライ・エツチング方法 - Google Patents

ドライ・エツチング方法

Info

Publication number
JPS58100684A
JPS58100684A JP20598182A JP20598182A JPS58100684A JP S58100684 A JPS58100684 A JP S58100684A JP 20598182 A JP20598182 A JP 20598182A JP 20598182 A JP20598182 A JP 20598182A JP S58100684 A JPS58100684 A JP S58100684A
Authority
JP
Japan
Prior art keywords
gas
etching
plasma
etch rate
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20598182A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0363209B2 (fr
Inventor
Seitaro Matsuo
松尾　誠太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP20598182A priority Critical patent/JPS58100684A/ja
Publication of JPS58100684A publication Critical patent/JPS58100684A/ja
Publication of JPH0363209B2 publication Critical patent/JPH0363209B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP20598182A 1982-11-26 1982-11-26 ドライ・エツチング方法 Granted JPS58100684A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20598182A JPS58100684A (ja) 1982-11-26 1982-11-26 ドライ・エツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20598182A JPS58100684A (ja) 1982-11-26 1982-11-26 ドライ・エツチング方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4531979A Division JPS55138834A (en) 1979-04-16 1979-04-16 Dry etching method

Publications (2)

Publication Number Publication Date
JPS58100684A true JPS58100684A (ja) 1983-06-15
JPH0363209B2 JPH0363209B2 (fr) 1991-09-30

Family

ID=16515916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20598182A Granted JPS58100684A (ja) 1982-11-26 1982-11-26 ドライ・エツチング方法

Country Status (1)

Country Link
JP (1) JPS58100684A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63261835A (ja) * 1987-04-20 1988-10-28 Fujitsu Ltd 電極・配線形成方法
JPS63278339A (ja) * 1986-12-19 1988-11-16 アプライド　マテリアルズインコーポレーテッド シリコンおよび珪化物のための臭素およびヨウ素エッチング方法
WO1989003402A1 (fr) * 1987-10-07 1989-04-20 Terumo Kabushiki Kaisha Materiau polymere absorbant les ultraviolets et procede de photogravure
JPH0286126A (ja) * 1988-07-11 1990-03-27 Philips Gloeilampenfab:Nv 臭化水素によるシリコンの反応性イオンエッチング
US8536061B2 (en) 2010-08-05 2013-09-17 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4572686B2 (ja) * 2005-01-14 2010-11-04 パナソニック電工株式会社 静電容量型半導体物理量センサ及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713137A (en) * 1980-06-24 1982-01-23 Toshiba Corp Amorphous alloy for magnetic head

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713137A (en) * 1980-06-24 1982-01-23 Toshiba Corp Amorphous alloy for magnetic head

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278339A (ja) * 1986-12-19 1988-11-16 アプライド　マテリアルズインコーポレーテッド シリコンおよび珪化物のための臭素およびヨウ素エッチング方法
US6020270A (en) * 1986-12-19 2000-02-01 Applied Materials, Inc. Bomine and iodine etch process for silicon and silicides
JPS63261835A (ja) * 1987-04-20 1988-10-28 Fujitsu Ltd 電極・配線形成方法
WO1989003402A1 (fr) * 1987-10-07 1989-04-20 Terumo Kabushiki Kaisha Materiau polymere absorbant les ultraviolets et procede de photogravure
US5157091A (en) * 1987-10-07 1992-10-20 Murahara Masataka Ultraviolet-absorbing polymer material and photoetching process
JPH0286126A (ja) * 1988-07-11 1990-03-27 Philips Gloeilampenfab:Nv 臭化水素によるシリコンの反応性イオンエッチング
US8536061B2 (en) 2010-08-05 2013-09-17 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPH0363209B2 (fr) 1991-09-30

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