JPH0363209B2 - - Google Patents
Info
- Publication number
- JPH0363209B2 JPH0363209B2 JP57205981A JP20598182A JPH0363209B2 JP H0363209 B2 JPH0363209 B2 JP H0363209B2 JP 57205981 A JP57205981 A JP 57205981A JP 20598182 A JP20598182 A JP 20598182A JP H0363209 B2 JPH0363209 B2 JP H0363209B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- sio
- plasma
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 29
- 229910052794 bromium Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- 229910052740 iodine Chemical group 0.000 claims description 9
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 5
- 239000011630 iodine Chemical group 0.000 claims description 5
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- 125000001246 bromo group Chemical group Br* 0.000 claims description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical group II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 31
- 239000000463 material Substances 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007261 regionalization Effects 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20598182A JPS58100684A (ja) | 1982-11-26 | 1982-11-26 | ドライ・エツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20598182A JPS58100684A (ja) | 1982-11-26 | 1982-11-26 | ドライ・エツチング方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4531979A Division JPS55138834A (en) | 1979-04-16 | 1979-04-16 | Dry etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58100684A JPS58100684A (ja) | 1983-06-15 |
| JPH0363209B2 true JPH0363209B2 (fr) | 1991-09-30 |
Family
ID=16515916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20598182A Granted JPS58100684A (ja) | 1982-11-26 | 1982-11-26 | ドライ・エツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100684A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4572686B2 (ja) * | 2005-01-14 | 2010-11-04 | パナソニック電工株式会社 | 静電容量型半導体物理量センサ及びその製造方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0565212A2 (fr) * | 1986-12-19 | 1993-10-13 | Applied Materials, Inc. | Procédé de décapage par iodine pour silicium et silicides |
| JPS63261835A (ja) * | 1987-04-20 | 1988-10-28 | Fujitsu Ltd | 電極・配線形成方法 |
| EP0380667A4 (en) * | 1987-10-07 | 1991-04-24 | Terumo Kabushiki Kaisha | Ultraviolet-absorbing polymer material and photoetching process |
| US5007982A (en) * | 1988-07-11 | 1991-04-16 | North American Philips Corporation | Reactive ion etching of silicon with hydrogen bromide |
| JP5537324B2 (ja) | 2010-08-05 | 2014-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713137A (en) * | 1980-06-24 | 1982-01-23 | Toshiba Corp | Amorphous alloy for magnetic head |
-
1982
- 1982-11-26 JP JP20598182A patent/JPS58100684A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713137A (en) * | 1980-06-24 | 1982-01-23 | Toshiba Corp | Amorphous alloy for magnetic head |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4572686B2 (ja) * | 2005-01-14 | 2010-11-04 | パナソニック電工株式会社 | 静電容量型半導体物理量センサ及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58100684A (ja) | 1983-06-15 |
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