JPS5799756A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS5799756A JPS5799756A JP17621280A JP17621280A JPS5799756A JP S5799756 A JPS5799756 A JP S5799756A JP 17621280 A JP17621280 A JP 17621280A JP 17621280 A JP17621280 A JP 17621280A JP S5799756 A JPS5799756 A JP S5799756A
- Authority
- JP
- Japan
- Prior art keywords
- film
- additive
- polyimide resin
- wiring
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- 239000000654 additive Substances 0.000 abstract 3
- 230000000996 additive effect Effects 0.000 abstract 3
- 229920001721 polyimide Polymers 0.000 abstract 3
- 239000009719 polyimide resin Substances 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical compound NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 abstract 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17621280A JPS5799756A (en) | 1980-12-13 | 1980-12-13 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17621280A JPS5799756A (en) | 1980-12-13 | 1980-12-13 | Semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5799756A true JPS5799756A (en) | 1982-06-21 |
| JPS6230697B2 JPS6230697B2 (enrdf_load_stackoverflow) | 1987-07-03 |
Family
ID=16009578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17621280A Granted JPS5799756A (en) | 1980-12-13 | 1980-12-13 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5799756A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5103288A (en) * | 1988-03-15 | 1992-04-07 | Nec Corporation | Semiconductor device having multilayered wiring structure with a small parasitic capacitance |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034181A (enrdf_load_stackoverflow) * | 1973-07-30 | 1975-04-02 | ||
| JPS5179573A (ja) * | 1975-01-06 | 1976-07-10 | Hitachi Ltd | Haisensonohogohoho |
| JPS5315786A (en) * | 1976-07-28 | 1978-02-14 | Hitachi Ltd | Multilayer wiring structure |
-
1980
- 1980-12-13 JP JP17621280A patent/JPS5799756A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5034181A (enrdf_load_stackoverflow) * | 1973-07-30 | 1975-04-02 | ||
| JPS5179573A (ja) * | 1975-01-06 | 1976-07-10 | Hitachi Ltd | Haisensonohogohoho |
| JPS5315786A (en) * | 1976-07-28 | 1978-02-14 | Hitachi Ltd | Multilayer wiring structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5103288A (en) * | 1988-03-15 | 1992-04-07 | Nec Corporation | Semiconductor device having multilayered wiring structure with a small parasitic capacitance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6230697B2 (enrdf_load_stackoverflow) | 1987-07-03 |
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