JPS5266374A - Galvanization of non electrolytic nickel for semiconductor substrate - Google Patents
Galvanization of non electrolytic nickel for semiconductor substrateInfo
- Publication number
- JPS5266374A JPS5266374A JP14311275A JP14311275A JPS5266374A JP S5266374 A JPS5266374 A JP S5266374A JP 14311275 A JP14311275 A JP 14311275A JP 14311275 A JP14311275 A JP 14311275A JP S5266374 A JPS5266374 A JP S5266374A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- galvanization
- electrolytic nickel
- non electrolytic
- galvanizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To establish a galvanizing method of Ni on semiconductor substrate by which the galvanized Ni layer can not be exfoliated, by galvanizing non-electrolytic Ni on substrates which have both P and N types domains after they are immersed in an acrivated solution and covered with gold film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14311275A JPS5266374A (en) | 1975-11-28 | 1975-11-28 | Galvanization of non electrolytic nickel for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14311275A JPS5266374A (en) | 1975-11-28 | 1975-11-28 | Galvanization of non electrolytic nickel for semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5266374A true JPS5266374A (en) | 1977-06-01 |
Family
ID=15331178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14311275A Pending JPS5266374A (en) | 1975-11-28 | 1975-11-28 | Galvanization of non electrolytic nickel for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5266374A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0457323A (en) * | 1990-06-27 | 1992-02-25 | Hitachi Ltd | Manufacture of semiconductor device |
US5236873A (en) * | 1991-05-17 | 1993-08-17 | SGA-Thomson Microelectronics, S.A. | Method for contacting a semiconductor component |
KR20150125684A (en) * | 2013-02-22 | 2015-11-09 | 알쉬메 | Method for forming a metal silicide using a solution containing gold ions and fluorine ions |
-
1975
- 1975-11-28 JP JP14311275A patent/JPS5266374A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0457323A (en) * | 1990-06-27 | 1992-02-25 | Hitachi Ltd | Manufacture of semiconductor device |
US5236873A (en) * | 1991-05-17 | 1993-08-17 | SGA-Thomson Microelectronics, S.A. | Method for contacting a semiconductor component |
KR20150125684A (en) * | 2013-02-22 | 2015-11-09 | 알쉬메 | Method for forming a metal silicide using a solution containing gold ions and fluorine ions |
JP2016510090A (en) * | 2013-02-22 | 2016-04-04 | アルスィメール | Method for forming metal silicide using solution containing gold ion and fluorine ion |
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