JPS5710231A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5710231A
JPS5710231A JP8282580A JP8282580A JPS5710231A JP S5710231 A JPS5710231 A JP S5710231A JP 8282580 A JP8282580 A JP 8282580A JP 8282580 A JP8282580 A JP 8282580A JP S5710231 A JPS5710231 A JP S5710231A
Authority
JP
Japan
Prior art keywords
layer
substrate
resist layer
spinner
adherence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8282580A
Other languages
Japanese (ja)
Inventor
Chiharu Kato
Toshihiro Abe
Hatsuo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8282580A priority Critical patent/JPS5710231A/en
Publication of JPS5710231A publication Critical patent/JPS5710231A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Abstract

PURPOSE:To improve the adherence of a resist layer by preparing hydrophilic surface of a substrate in the pretreating step of forming the resist layer and coating by spinning a thin layer of organic silane compound dissolved in volatile organic solvent. CONSTITUTION:A substrate 1 formed, for example, with an SiO2 layer 2 is cleaned, for example, with a liquid mixture of sulfuric acid and hydrogen peroxide to prepare hydrophilic surface of the layer 2. Then, the substrate 1 is placed on a spinner, a treating solution in which the prescribed amount of hexamethylenedisilazane is, for example, dissolved, for example, in acetone, methanol, etc. is dropped in rotating state, and an organic silane compound layer 3 is formed on the surface. The thickness of the layer 3 is adjusted according to the type of the organic solvent, the mixture ratio, spinner's rotating condition, etc., and is thus set to less than 100Angstrom . Subsequent to this treatment, a resist layer 4 is coated by spinning. Thus, the adherence of the layer 4 can be strengthened, and sidewise etching amount can be decreased, thereby improving the etching accuracy.
JP8282580A 1980-06-20 1980-06-20 Manufacture of semiconductor device Pending JPS5710231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8282580A JPS5710231A (en) 1980-06-20 1980-06-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8282580A JPS5710231A (en) 1980-06-20 1980-06-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5710231A true JPS5710231A (en) 1982-01-19

Family

ID=13785172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8282580A Pending JPS5710231A (en) 1980-06-20 1980-06-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710231A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63178159A (en) * 1986-10-15 1988-07-22 キンバリー　クラーク　ワールドワイド　インコーポレイテッド Nonwoven web forming extrudable composition of pressure-sensitive elastomer adhesive and use of said extrudable composition in the formation of nonwoven web and stretched bonded laminate material
US4801560A (en) * 1987-10-02 1989-01-31 Motorola Inc. Semiconductor processing utilizing carbon containing thick film spin-on glass
US5059087A (en) * 1989-05-15 1991-10-22 Murata Kikai Kabushiki Kaisha Bobbin conveying system
KR100468667B1 (en) * 1997-06-17 2005-03-16 삼성전자주식회사 Forming of pattern for semiconductor device by photolithographic process
JP2006173462A (en) * 2004-12-17 2006-06-29 Disco Abrasive Syst Ltd Wafer processor
WO2007029971A1 (en) * 2005-09-07 2007-03-15 Iferro Co., Ltd. Method of forming organic layer on semiconductor substrate
WO2007032621A1 (en) * 2005-09-12 2007-03-22 Iferro Co., Ltd. Ferroelectric memory device and method of manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63178159A (en) * 1986-10-15 1988-07-22 キンバリー　クラーク　ワールドワイド　インコーポレイテッド Nonwoven web forming extrudable composition of pressure-sensitive elastomer adhesive and use of said extrudable composition in the formation of nonwoven web and stretched bonded laminate material
US4801560A (en) * 1987-10-02 1989-01-31 Motorola Inc. Semiconductor processing utilizing carbon containing thick film spin-on glass
US5059087A (en) * 1989-05-15 1991-10-22 Murata Kikai Kabushiki Kaisha Bobbin conveying system
KR100468667B1 (en) * 1997-06-17 2005-03-16 삼성전자주식회사 Forming of pattern for semiconductor device by photolithographic process
JP2006173462A (en) * 2004-12-17 2006-06-29 Disco Abrasive Syst Ltd Wafer processor
WO2007029971A1 (en) * 2005-09-07 2007-03-15 Iferro Co., Ltd. Method of forming organic layer on semiconductor substrate
WO2007032621A1 (en) * 2005-09-12 2007-03-22 Iferro Co., Ltd. Ferroelectric memory device and method of manufacturing the same
US8120082B2 (en) 2005-09-12 2012-02-21 University of Seoul, Foundation of Industry-Academic Cooperation Ferroelectric memory device and method for manufacturing the same

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