JPS57173831A - Method of forming resist pattern for microscopic fabrication - Google Patents

Method of forming resist pattern for microscopic fabrication

Info

Publication number
JPS57173831A
JPS57173831A JP56059096A JP5909681A JPS57173831A JP S57173831 A JPS57173831 A JP S57173831A JP 56059096 A JP56059096 A JP 56059096A JP 5909681 A JP5909681 A JP 5909681A JP S57173831 A JPS57173831 A JP S57173831A
Authority
JP
Japan
Prior art keywords
resist pattern
aromatic amine
far ultraviolet
solution
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56059096A
Other languages
Japanese (ja)
Other versions
JPS6410060B2 (en
Inventor
Yoshio Yamashita
Mitsumasa Kunishi
Takaharu Kawazu
Seigo Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56059096A priority Critical patent/JPS57173831A/en
Publication of JPS57173831A publication Critical patent/JPS57173831A/en
Publication of JPS6410060B2 publication Critical patent/JPS6410060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a resist pattern for use in microscopic fabrication of highly integrated semiconductor parts, by exposing an organic film coated on a substrate to far ultraviolet rays, immersing it in an aromatic amine solution, baking it, and further immersing it in a similar solution. CONSTITUTION:An organic polymer film containing epoxy groups is coated on a substrate, and exposed to far ultraviolet rays to form a pattern, immersed in a solution containing 2-10% aromatic amine at 15-30 deg.C, and baked at 100- 300 deg.C. It is again immersed in a solution containing a >=10% aromatic amine at >=40 deg.C, thus permitting a high-resolution resist pattern formed by far ultraviolet ray irradiation to be applied to dry etching using ion plasma causing small side etching.
JP56059096A 1981-04-21 1981-04-21 Method of forming resist pattern for microscopic fabrication Granted JPS57173831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56059096A JPS57173831A (en) 1981-04-21 1981-04-21 Method of forming resist pattern for microscopic fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56059096A JPS57173831A (en) 1981-04-21 1981-04-21 Method of forming resist pattern for microscopic fabrication

Publications (2)

Publication Number Publication Date
JPS57173831A true JPS57173831A (en) 1982-10-26
JPS6410060B2 JPS6410060B2 (en) 1989-02-21

Family

ID=13103453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56059096A Granted JPS57173831A (en) 1981-04-21 1981-04-21 Method of forming resist pattern for microscopic fabrication

Country Status (1)

Country Link
JP (1) JPS57173831A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0394741A2 (en) * 1989-04-24 1990-10-31 Siemens Aktiengesellschaft Deep UV etch resistant system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0394741A2 (en) * 1989-04-24 1990-10-31 Siemens Aktiengesellschaft Deep UV etch resistant system

Also Published As

Publication number Publication date
JPS6410060B2 (en) 1989-02-21

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