JPS5623744A - Resist pattern forming method - Google Patents

Resist pattern forming method

Info

Publication number
JPS5623744A
JPS5623744A JP9861679A JP9861679A JPS5623744A JP S5623744 A JPS5623744 A JP S5623744A JP 9861679 A JP9861679 A JP 9861679A JP 9861679 A JP9861679 A JP 9861679A JP S5623744 A JPS5623744 A JP S5623744A
Authority
JP
Japan
Prior art keywords
pattern
epoxy group
resist pattern
copolymer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9861679A
Other languages
Japanese (ja)
Other versions
JPS5753655B2 (en
Inventor
Yoshio Yamashita
Mitsumasa Kunishi
Takaharu Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP9861679A priority Critical patent/JPS5623744A/en
Publication of JPS5623744A publication Critical patent/JPS5623744A/en
Publication of JPS5753655B2 publication Critical patent/JPS5753655B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain the miniature resist pattern by irradiating ionizing radiation to the organic film of copolymer containing epoxy group to form a pattern and immersing it with aromatic amine or acid anhydride. CONSTITUTION:A copolymer of glycidyl methacrylate and methyl methacrylate is formed as an organic coating containing epoxy group on a substrate, a pattern is drawn thereon by far ultraviolet rays, and is heated in N2 to crosslink it. When orthophenylene diamine is immersed therewith, it is reacted with epoxy retained in the pattern to be introduced in large amount without deformation of the pattern. This configuration can provide high resolution in far ultraviolet ray lithography with preferable adherence with the substrate, and there can be obtained a miniatue resist pattern having resistance against ion and plasma. In order to sufficiently immerse the pattern in aromiatic amine or aromatic group acid anhydride, the epoxy group in the copolymer forming the organic coating is preferably higher than 10mol%.
JP9861679A 1979-08-03 1979-08-03 Resist pattern forming method Granted JPS5623744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9861679A JPS5623744A (en) 1979-08-03 1979-08-03 Resist pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9861679A JPS5623744A (en) 1979-08-03 1979-08-03 Resist pattern forming method

Publications (2)

Publication Number Publication Date
JPS5623744A true JPS5623744A (en) 1981-03-06
JPS5753655B2 JPS5753655B2 (en) 1982-11-13

Family

ID=14224497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9861679A Granted JPS5623744A (en) 1979-08-03 1979-08-03 Resist pattern forming method

Country Status (1)

Country Link
JP (1) JPS5623744A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0394741A2 (en) * 1989-04-24 1990-10-31 Siemens Aktiengesellschaft Deep UV etch resistant system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0394741A2 (en) * 1989-04-24 1990-10-31 Siemens Aktiengesellschaft Deep UV etch resistant system

Also Published As

Publication number Publication date
JPS5753655B2 (en) 1982-11-13

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