JPS5623744A - Resist pattern forming method - Google Patents
Resist pattern forming methodInfo
- Publication number
- JPS5623744A JPS5623744A JP9861679A JP9861679A JPS5623744A JP S5623744 A JPS5623744 A JP S5623744A JP 9861679 A JP9861679 A JP 9861679A JP 9861679 A JP9861679 A JP 9861679A JP S5623744 A JPS5623744 A JP S5623744A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- epoxy group
- resist pattern
- copolymer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To obtain the miniature resist pattern by irradiating ionizing radiation to the organic film of copolymer containing epoxy group to form a pattern and immersing it with aromatic amine or acid anhydride. CONSTITUTION:A copolymer of glycidyl methacrylate and methyl methacrylate is formed as an organic coating containing epoxy group on a substrate, a pattern is drawn thereon by far ultraviolet rays, and is heated in N2 to crosslink it. When orthophenylene diamine is immersed therewith, it is reacted with epoxy retained in the pattern to be introduced in large amount without deformation of the pattern. This configuration can provide high resolution in far ultraviolet ray lithography with preferable adherence with the substrate, and there can be obtained a miniatue resist pattern having resistance against ion and plasma. In order to sufficiently immerse the pattern in aromiatic amine or aromatic group acid anhydride, the epoxy group in the copolymer forming the organic coating is preferably higher than 10mol%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9861679A JPS5623744A (en) | 1979-08-03 | 1979-08-03 | Resist pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9861679A JPS5623744A (en) | 1979-08-03 | 1979-08-03 | Resist pattern forming method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5623744A true JPS5623744A (en) | 1981-03-06 |
JPS5753655B2 JPS5753655B2 (en) | 1982-11-13 |
Family
ID=14224497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9861679A Granted JPS5623744A (en) | 1979-08-03 | 1979-08-03 | Resist pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5623744A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0394741A2 (en) * | 1989-04-24 | 1990-10-31 | Siemens Aktiengesellschaft | Deep UV etch resistant system |
-
1979
- 1979-08-03 JP JP9861679A patent/JPS5623744A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0394741A2 (en) * | 1989-04-24 | 1990-10-31 | Siemens Aktiengesellschaft | Deep UV etch resistant system |
Also Published As
Publication number | Publication date |
---|---|
JPS5753655B2 (en) | 1982-11-13 |
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