JPS57173942A - Formation of resist pattern for fine processing - Google Patents
Formation of resist pattern for fine processingInfo
- Publication number
- JPS57173942A JPS57173942A JP5909781A JP5909781A JPS57173942A JP S57173942 A JPS57173942 A JP S57173942A JP 5909781 A JP5909781 A JP 5909781A JP 5909781 A JP5909781 A JP 5909781A JP S57173942 A JPS57173942 A JP S57173942A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- rays
- irradiation
- fine processing
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To enhance resolving power of a resist pattern for fine processing by a method wherein an organic film consisting of a polymer containing epoxy radical is formed on a substrate, far ultraviolet rays are irradiated thereto to form the pattern, and after X rays are irradiated in the lump moreover, aromatic amine is impregnated therein. CONSTITUTION:The organic film consisting of the polymer containing epoxy radical is formed on a substrate, and irradiation of far ultraviolet rays are performed thereon to form the pattern. Then the irradiation treatment of electron rays having 1muC/cm<2> or more of irradiating quantity or X rays having 10mJ/ cm<2> or more of irradiating quantity is performed in a lump on the pattern thereof. Then aromatic amine or aromatic acid anhydride is impregnated in the pattern thereof. When irradiation of electron rays or X rays is performed by this way with the prescribed quantity as the pretreatment before impregnation is to be performed, the thermal bridging treatment for prevention of swelling of the pattern can be performed as favorably, and the pattern having high resolving power can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5909781A JPS57173942A (en) | 1981-04-21 | 1981-04-21 | Formation of resist pattern for fine processing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5909781A JPS57173942A (en) | 1981-04-21 | 1981-04-21 | Formation of resist pattern for fine processing |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57173942A true JPS57173942A (en) | 1982-10-26 |
Family
ID=13103483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5909781A Pending JPS57173942A (en) | 1981-04-21 | 1981-04-21 | Formation of resist pattern for fine processing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57173942A (en) |
-
1981
- 1981-04-21 JP JP5909781A patent/JPS57173942A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3470104D1 (en) | Process for the preparation of polyimide and polyisoindolo-quinazoline dione relief structures | |
JPS561536A (en) | Manufacture of resist pattern | |
JPS57173942A (en) | Formation of resist pattern for fine processing | |
AU5755586A (en) | Method for producing a spinning nozzle plate | |
EP0098922A3 (en) | Process for selectively generating positive and negative resist patterns from a single exposure pattern | |
JPS5245597A (en) | Ultraviolet rays curing accelerator | |
JPS5327264A (en) | Method of treating water | |
JPS5689894A (en) | Method of refining water used for flushing electronic parts | |
JPS5255259A (en) | Apparatus for treating refuse pit sewage water | |
JPS5265181A (en) | Production process of purified water | |
JPS54109244A (en) | Method of treating organic sludge | |
JPS51122943A (en) | Process for treating sewage water | |
JPS51122945A (en) | Process for treating waste water | |
JPS5623744A (en) | Resist pattern forming method | |
JPS57109852A (en) | Curing method of silicone | |
JPS52154248A (en) | Rotary disc type process and apparatus for treating waste water | |
JPS5425977A (en) | Method and apparatus for irradiation solid brticle under cooling | |
JPS51122942A (en) | Process for treating sewage water | |
JPS5338898A (en) | Method of irradiation with radioactive rays | |
JPS5226546A (en) | Method for crosslinking ethylene polymers by irradiation | |
JPS5655943A (en) | Pattern forming method | |
JPS56103228A (en) | Surface treatment of thermoplastic resin molded article | |
JPS51119162A (en) | Flocculation treating method | |
JPS5212248A (en) | Method for treating coated substrate such as boards | |
JPS51132249A (en) | A method for modifying polyethylene resin by crosslinking |