JPS55138078A - Selective etching liquid for laminated metallic film - Google Patents

Selective etching liquid for laminated metallic film

Info

Publication number
JPS55138078A
JPS55138078A JP4332479A JP4332479A JPS55138078A JP S55138078 A JPS55138078 A JP S55138078A JP 4332479 A JP4332479 A JP 4332479A JP 4332479 A JP4332479 A JP 4332479A JP S55138078 A JPS55138078 A JP S55138078A
Authority
JP
Japan
Prior art keywords
film
etching
liquid
etching liquid
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4332479A
Other languages
Japanese (ja)
Inventor
Kazuo Matsuzaki
Hirobumi Fujisawa
Akira Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP4332479A priority Critical patent/JPS55138078A/en
Publication of JPS55138078A publication Critical patent/JPS55138078A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable the etching of a minute pattern without forming side etching by a method wherein a surface active agent is added to an etching liquid when selectively etching the laminated metallic films being mounted as the electrodes of a semiconductor.
CONSTITUTION: A SiO2 surface protecting film 2 is installed onto a Si substrate 1, and the window portion is coated with a metallic film 3 of Cr, Ti, Mo, etc. contacting with Si. A Cu film 4 and an Ni film 5 are further laminated on the film 3, a photoresist film 6 for forming a pattern is further applied onto the film 5, and the Cu film 4 and the Ni film 5 are selectively etched according to an optical etching method. In this case, a liquid, which is manufactured by adding a surface active agent such as polyethyleneglycol alkylphenylether, etc. to a mixed acid liquid produced by compounding sulfuric acid, phosphoric acid, hydrogen peroxide and water at the rate of 2:3:1:4 at the rate of 1vol% and by keeping the mixture at 50°C, is used as an etching liquid. Side etching is also extremely little, and uniform etching can also be formed to a minute pattern.
COPYRIGHT: (C)1980,JPO&Japio
JP4332479A 1979-04-10 1979-04-10 Selective etching liquid for laminated metallic film Pending JPS55138078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4332479A JPS55138078A (en) 1979-04-10 1979-04-10 Selective etching liquid for laminated metallic film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4332479A JPS55138078A (en) 1979-04-10 1979-04-10 Selective etching liquid for laminated metallic film

Publications (1)

Publication Number Publication Date
JPS55138078A true JPS55138078A (en) 1980-10-28

Family

ID=12660626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4332479A Pending JPS55138078A (en) 1979-04-10 1979-04-10 Selective etching liquid for laminated metallic film

Country Status (1)

Country Link
JP (1) JPS55138078A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124589A (en) * 1984-11-17 1986-06-12 Daikin Ind Ltd Composition for etching agent
JPH07263718A (en) * 1993-03-19 1995-10-13 Ramot Univ Authority For Appl Res & Ind Dev Ltd Schottky semiconductor device and its preparation
JP2005146358A (en) * 2003-11-17 2005-06-09 Mitsubishi Gas Chem Co Inc Etching liquid for titanium or titanium alloy

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124589A (en) * 1984-11-17 1986-06-12 Daikin Ind Ltd Composition for etching agent
JPH07263718A (en) * 1993-03-19 1995-10-13 Ramot Univ Authority For Appl Res & Ind Dev Ltd Schottky semiconductor device and its preparation
JP2005146358A (en) * 2003-11-17 2005-06-09 Mitsubishi Gas Chem Co Inc Etching liquid for titanium or titanium alloy
JP4535232B2 (en) * 2003-11-17 2010-09-01 三菱瓦斯化学株式会社 Titanium or titanium alloy etchant

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