JPS5797664A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5797664A JPS5797664A JP17488680A JP17488680A JPS5797664A JP S5797664 A JPS5797664 A JP S5797664A JP 17488680 A JP17488680 A JP 17488680A JP 17488680 A JP17488680 A JP 17488680A JP S5797664 A JPS5797664 A JP S5797664A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- junction
- substrate
- ring
- peripheral part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 3
- 230000002093 peripheral effect Effects 0.000 abstract 3
- 230000003014 reinforcing effect Effects 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012779 reinforcing material Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 238000005493 welding type Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Die Bonding (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To highten mechanical strength by providing the peripheral part of a substrate having a ring reinforcing member with a ring-formed inclined groove to fill with glass in a semiconductor device of the pessure welding type having a P-N junction. CONSTITUTION:On the lower surface of a disk-shaped silicon substrate 11 having the P-N junction a ring reinforcing member 12 for reinforcing the peripheral part is fixed with a soldering material 13. The peripheral part of a substrate 11 is provided with an inclined groove 14 by sandblast or diamond bleed so as to be included in a projection member of the ring reinforcing material to fill the inside of the groove with glass. The inclined groove is formed so as to be positively bevelled to the P-N junction of the substrate 11. The P-N junction is protected by the glass inside the groove 14 and the silicon outside the groove 14 to exclude the contamination. Accordingly, the region, wherein the groove 14 to be formed is reinforced by the reinforcing material 12 resulting in the superior mechanical strength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17488680A JPS5946422B2 (en) | 1980-12-11 | 1980-12-11 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17488680A JPS5946422B2 (en) | 1980-12-11 | 1980-12-11 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5797664A true JPS5797664A (en) | 1982-06-17 |
| JPS5946422B2 JPS5946422B2 (en) | 1984-11-12 |
Family
ID=15986379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17488680A Expired JPS5946422B2 (en) | 1980-12-11 | 1980-12-11 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946422B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340321A (en) * | 1989-07-06 | 1991-02-21 | Ishii Hiyouki:Kk | Illuminous membrane switch |
| JPH0366132U (en) * | 1989-10-30 | 1991-06-27 |
-
1980
- 1980-12-11 JP JP17488680A patent/JPS5946422B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5946422B2 (en) | 1984-11-12 |
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