JPS5796525A - Method of charged beam exposure - Google Patents

Method of charged beam exposure

Info

Publication number
JPS5796525A
JPS5796525A JP17267580A JP17267580A JPS5796525A JP S5796525 A JPS5796525 A JP S5796525A JP 17267580 A JP17267580 A JP 17267580A JP 17267580 A JP17267580 A JP 17267580A JP S5796525 A JPS5796525 A JP S5796525A
Authority
JP
Japan
Prior art keywords
shielding plate
charged beam
pattern
opening
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17267580A
Other languages
Japanese (ja)
Other versions
JPH0140494B2 (en
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17267580A priority Critical patent/JPS5796525A/en
Publication of JPS5796525A publication Critical patent/JPS5796525A/en
Publication of JPH0140494B2 publication Critical patent/JPH0140494B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/026Means for avoiding or neutralising unwanted electrical charges on tube components

Abstract

PURPOSE:To prevent the shift of the charged beam due to the electric charge stored in a resist pattern which has been exposed, by providing a conductive shielding plate having an opening whose area is slightly wider than the scanning area of the charged beam. CONSTITUTION:In the case the scanning area of the electron beam is 2X2mm., the opening in the conductive shielding plate is 2.2X2.2mm.. The electron beam is irradiated through the opening in the shielding plate 5 which is provided at the position 1mm. higher than a wafer 1. The wafer has the resist with a thickness of 2mum and a radius of 90mm.. In this method, the pattern in the exposed region is not subjected to the effect of the charge in the exposed area 2, and the maximum shift of the pattern is 0.5mum or less.
JP17267580A 1980-12-09 1980-12-09 Method of charged beam exposure Granted JPS5796525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17267580A JPS5796525A (en) 1980-12-09 1980-12-09 Method of charged beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17267580A JPS5796525A (en) 1980-12-09 1980-12-09 Method of charged beam exposure

Publications (2)

Publication Number Publication Date
JPS5796525A true JPS5796525A (en) 1982-06-15
JPH0140494B2 JPH0140494B2 (en) 1989-08-29

Family

ID=15946279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17267580A Granted JPS5796525A (en) 1980-12-09 1980-12-09 Method of charged beam exposure

Country Status (1)

Country Link
JP (1) JPS5796525A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258620A (en) * 1985-09-09 1987-03-14 Nippon Telegr & Teleph Corp <Ntt> Charged beam device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258620A (en) * 1985-09-09 1987-03-14 Nippon Telegr & Teleph Corp <Ntt> Charged beam device

Also Published As

Publication number Publication date
JPH0140494B2 (en) 1989-08-29

Similar Documents

Publication Publication Date Title
JPS574172A (en) Light conductive member
FR2350687A1 (en) APPARATUS FOR PRODUCING HIGH INTENSITY ELECTRON AND ION BEAMS
JPS6439021A (en) X-ray mask
GB8319949D0 (en) Electron beam lithography
GB2041639B (en) Electron beam lithography
JPS5796525A (en) Method of charged beam exposure
JPS5216916A (en) Reodorizing device
JPS56116622A (en) X-ray transcriber
JPS5684856A (en) Electron beam focusing device
JPS51119287A (en) Recutangular-shape beam ion source
JPS6415604A (en) Measuring apparatus for length by electron beam
JPS5360178A (en) Target for focusing of electron beam
JPS52115161A (en) Electron gun for electron beam exposing device
JPS5291361A (en) Scanning electron microscope
JPS56125833A (en) Exposing method for electron beam
JPS56112729A (en) Exposure of electron beam
JPS52103966A (en) Deflection unit for charged particle ray exposure device
JPS52107897A (en) Ion microanalyzer equipped with primary ion beam separator
JPS5487479A (en) Photo mask blank substrate
JPS5666037A (en) X-ray mask
JPS52119867A (en) Formation of fine pattern
JPS5684853A (en) Face structure of member located close to electron beam path
JPS55128829A (en) Device for exposure to electron beam
JPS5710932A (en) Beam blanking method in electron beam exposure
JPS5326193A (en) Observing method of ion beam radiati on point positions