JPS56116622A - X-ray transcriber - Google Patents

X-ray transcriber

Info

Publication number
JPS56116622A
JPS56116622A JP1999680A JP1999680A JPS56116622A JP S56116622 A JPS56116622 A JP S56116622A JP 1999680 A JP1999680 A JP 1999680A JP 1999680 A JP1999680 A JP 1999680A JP S56116622 A JPS56116622 A JP S56116622A
Authority
JP
Japan
Prior art keywords
ray
plates
mask
deflecting plates
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999680A
Other languages
Japanese (ja)
Other versions
JPS622700B2 (en
Inventor
Masahiro Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1999680A priority Critical patent/JPS56116622A/en
Publication of JPS56116622A publication Critical patent/JPS56116622A/en
Publication of JPS622700B2 publication Critical patent/JPS622700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details

Abstract

PURPOSE:To deviate ions and electrons to the outside of an irradiation plane by providing deflecting plates or magnetic deflectors between an X-ray generating device and an X-ray irradiation plane wherein a high-frequency and high voltage is applied to electrode plates to ionize neutron atoms in plasma. CONSTITUTION:Deflecting plates 13 are provided between an X-ray source 9 and an irradiation plane (mask b) and traps 14 are installed at the external circumference of the mask (b). Discharged plasma X-rays emitted from the X-ray source include ions, electrons, neutral atoms, and electron beams as plasma substances. With a high-frequency and high voltage applied to the deflecting plates 13 by juxtaposing an electrode 15, the neutral atoms will be ionized and the course is deflected by the defleting plates 13 to deviate the mask plane (b) and to proceed to the traps 14. Therefore, the installation of an X-ray transilluminating film is eliminated and transcription with little variation in light exposure will be possible without decreasing X-ray amount. Magnetic deflectors by a magnetic field may be used instead of the deflecting plates 13.
JP1999680A 1980-02-20 1980-02-20 X-ray transcriber Granted JPS56116622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1999680A JPS56116622A (en) 1980-02-20 1980-02-20 X-ray transcriber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1999680A JPS56116622A (en) 1980-02-20 1980-02-20 X-ray transcriber

Publications (2)

Publication Number Publication Date
JPS56116622A true JPS56116622A (en) 1981-09-12
JPS622700B2 JPS622700B2 (en) 1987-01-21

Family

ID=12014764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1999680A Granted JPS56116622A (en) 1980-02-20 1980-02-20 X-ray transcriber

Country Status (1)

Country Link
JP (1) JPS56116622A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130351A (en) * 1981-02-05 1982-08-12 Seiko Epson Corp X-ray device
JPS58113899A (en) * 1981-12-28 1983-07-06 富士通株式会社 X-ray irradiation apparatus
JPS58115821A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd X-ray exposure device
JPS5913325A (en) * 1982-07-14 1984-01-24 Nec Corp Plasma x-ray exposure apparatus
US7136141B2 (en) 2002-12-23 2006-11-14 Asml Netherlands B.V. Lithographic apparatus with debris suppression, and device manufacturing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130351A (en) * 1981-02-05 1982-08-12 Seiko Epson Corp X-ray device
JPS58113899A (en) * 1981-12-28 1983-07-06 富士通株式会社 X-ray irradiation apparatus
JPS58115821A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd X-ray exposure device
JPS5913325A (en) * 1982-07-14 1984-01-24 Nec Corp Plasma x-ray exposure apparatus
US7136141B2 (en) 2002-12-23 2006-11-14 Asml Netherlands B.V. Lithographic apparatus with debris suppression, and device manufacturing method

Also Published As

Publication number Publication date
JPS622700B2 (en) 1987-01-21

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