JPS57130351A - X-ray device - Google Patents

X-ray device

Info

Publication number
JPS57130351A
JPS57130351A JP56016147A JP1614781A JPS57130351A JP S57130351 A JPS57130351 A JP S57130351A JP 56016147 A JP56016147 A JP 56016147A JP 1614781 A JP1614781 A JP 1614781A JP S57130351 A JPS57130351 A JP S57130351A
Authority
JP
Japan
Prior art keywords
plasma
generated
discharge
metal
status
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56016147A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56016147A priority Critical patent/JPS57130351A/en
Publication of JPS57130351A publication Critical patent/JPS57130351A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To generate hardened X-rays with high intensity by illuminating electron beams to Si plasma generated in a capillary section. CONSTITUTION:By applying a DC voltage to a discharge capillary 1 and an electron gun composed of a cathod 5 and a tip 6, Si plasma or metal plasma is generated by discharge of Si of a discharge capillary section 1 or a metal electrode, and also accelerated electrons are generated from the tip 6 of the electron gun. These electrons are illuminated to plasma, inducing Si plasma or metal plasma at a higher excitation status. When the plasma returns to an original base status from an excitation status, hardened X-rays of 1 to 10 Angstroms with high intensity are generated from the capillary section 1.
JP56016147A 1981-02-05 1981-02-05 X-ray device Pending JPS57130351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56016147A JPS57130351A (en) 1981-02-05 1981-02-05 X-ray device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56016147A JPS57130351A (en) 1981-02-05 1981-02-05 X-ray device

Publications (1)

Publication Number Publication Date
JPS57130351A true JPS57130351A (en) 1982-08-12

Family

ID=11908382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56016147A Pending JPS57130351A (en) 1981-02-05 1981-02-05 X-ray device

Country Status (1)

Country Link
JP (1) JPS57130351A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116622A (en) * 1980-02-20 1981-09-12 Fujitsu Ltd X-ray transcriber

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116622A (en) * 1980-02-20 1981-09-12 Fujitsu Ltd X-ray transcriber

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