JPS5789246A - Fabrication of semiconductor device - Google Patents
Fabrication of semiconductor deviceInfo
- Publication number
- JPS5789246A JPS5789246A JP55165508A JP16550880A JPS5789246A JP S5789246 A JPS5789246 A JP S5789246A JP 55165508 A JP55165508 A JP 55165508A JP 16550880 A JP16550880 A JP 16550880A JP S5789246 A JPS5789246 A JP S5789246A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide layer
- capacitive element
- increase
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55165508A JPS5789246A (en) | 1980-11-25 | 1980-11-25 | Fabrication of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55165508A JPS5789246A (en) | 1980-11-25 | 1980-11-25 | Fabrication of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5789246A true JPS5789246A (en) | 1982-06-03 |
Family
ID=15813720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55165508A Pending JPS5789246A (en) | 1980-11-25 | 1980-11-25 | Fabrication of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5789246A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01128460A (ja) * | 1987-11-12 | 1989-05-22 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
JPH02122676A (ja) * | 1988-11-01 | 1990-05-10 | Matsushita Electron Corp | 半導体容量およびその製造方法 |
GB2371676A (en) * | 2000-08-31 | 2002-07-31 | Agere Syst Guardian Corp | Modification of dielectric constant of insulating layer by ion implantation |
-
1980
- 1980-11-25 JP JP55165508A patent/JPS5789246A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01128460A (ja) * | 1987-11-12 | 1989-05-22 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
JPH02122676A (ja) * | 1988-11-01 | 1990-05-10 | Matsushita Electron Corp | 半導体容量およびその製造方法 |
GB2371676A (en) * | 2000-08-31 | 2002-07-31 | Agere Syst Guardian Corp | Modification of dielectric constant of insulating layer by ion implantation |
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