JPS5788757A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5788757A JPS5788757A JP55164312A JP16431280A JPS5788757A JP S5788757 A JPS5788757 A JP S5788757A JP 55164312 A JP55164312 A JP 55164312A JP 16431280 A JP16431280 A JP 16431280A JP S5788757 A JPS5788757 A JP S5788757A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- cyclic
- downs
- sio2
- ups
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 125000004122 cyclic group Chemical group 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Recrystallisation Techniques (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55164312A JPS5788757A (en) | 1980-11-21 | 1980-11-21 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55164312A JPS5788757A (en) | 1980-11-21 | 1980-11-21 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5788757A true JPS5788757A (en) | 1982-06-02 |
Family
ID=15790741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55164312A Pending JPS5788757A (en) | 1980-11-21 | 1980-11-21 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5788757A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63114144A (ja) * | 1986-10-31 | 1988-05-19 | Toshiba Corp | 半導体装置の製造方法 |
| US5856702A (en) * | 1996-04-19 | 1999-01-05 | Nec Corporation | Polysilicon resistor and method of producing same |
-
1980
- 1980-11-21 JP JP55164312A patent/JPS5788757A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63114144A (ja) * | 1986-10-31 | 1988-05-19 | Toshiba Corp | 半導体装置の製造方法 |
| US5856702A (en) * | 1996-04-19 | 1999-01-05 | Nec Corporation | Polysilicon resistor and method of producing same |
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