JPS5787178A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5787178A JPS5787178A JP55163695A JP16369580A JPS5787178A JP S5787178 A JPS5787178 A JP S5787178A JP 55163695 A JP55163695 A JP 55163695A JP 16369580 A JP16369580 A JP 16369580A JP S5787178 A JPS5787178 A JP S5787178A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- spacer
- aluminum
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163695A JPS5787178A (en) | 1980-11-19 | 1980-11-19 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163695A JPS5787178A (en) | 1980-11-19 | 1980-11-19 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5787178A true JPS5787178A (en) | 1982-05-31 |
JPS6336148B2 JPS6336148B2 (enrdf_load_stackoverflow) | 1988-07-19 |
Family
ID=15778844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55163695A Granted JPS5787178A (en) | 1980-11-19 | 1980-11-19 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5787178A (enrdf_load_stackoverflow) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5248478A (en) * | 1975-10-16 | 1977-04-18 | Fujitsu Ltd | Process for production of semiconductor device |
-
1980
- 1980-11-19 JP JP55163695A patent/JPS5787178A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5248478A (en) * | 1975-10-16 | 1977-04-18 | Fujitsu Ltd | Process for production of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6336148B2 (enrdf_load_stackoverflow) | 1988-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54154289A (en) | Manufacture of thin-film transistor array | |
EP0203225A3 (en) | Mesfet transistor with air layer between the connections of the gate electrode and the substrate and the respective fabrication process | |
JPS5787178A (en) | Semiconductor device and manufacture thereof | |
JPS5676577A (en) | Gaas schottky gate field effect transistor | |
JPS6472567A (en) | Manufacture of semiconductor device | |
JPS5787175A (en) | Semiconductor device and manufacture thereof | |
JPS6486564A (en) | Manufacture of field-effect transistor | |
JPS5277682A (en) | Manufacture of semiconductor device | |
JPS57188884A (en) | Formation of recessed minute multilayer gate electrode | |
JPS57204175A (en) | Manufacture of semiconductor device | |
JPS5673474A (en) | Manufacture of semiconductor device | |
JPS5698877A (en) | Gaas field effect transistor | |
JPS57104267A (en) | Manufacture of semiconductor device | |
JPS5591183A (en) | Manufacture of semiconductor device | |
JPS55151370A (en) | Field effect transistor and fabricating method of the same | |
JPS57180176A (en) | Manufacturing method for semiconductor device | |
JPS57154877A (en) | Schottky barrier gate type field effect transistor | |
JPS57155778A (en) | Manufacture of schottky barrier gate fet | |
JPS577123A (en) | Manufacture of compound semiconductor device | |
JPS57198664A (en) | Semiconductor device | |
JPS57183071A (en) | Formation of recess type fine multi-layer gate electrode | |
KR940004853A (ko) | 박막 트랜지스터의 저항층 식각방법 | |
JPS6459963A (en) | Manufacture of field-effect transistor | |
JPS5529783A (en) | Manufacture of semiconductor detector | |
JPS57211275A (en) | Manufacture of schottky barrier gate type field-effect transistor |