JPS5784171A - Manufacture of semiconductor substrate - Google Patents

Manufacture of semiconductor substrate

Info

Publication number
JPS5784171A
JPS5784171A JP55159935A JP15993580A JPS5784171A JP S5784171 A JPS5784171 A JP S5784171A JP 55159935 A JP55159935 A JP 55159935A JP 15993580 A JP15993580 A JP 15993580A JP S5784171 A JPS5784171 A JP S5784171A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
layer
substrate
oxide film
slumping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55159935A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641066B2 (enrdf_load_stackoverflow
Inventor
Fumio Tobioka
Shoichi Kitane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55159935A priority Critical patent/JPS5784171A/ja
Publication of JPS5784171A publication Critical patent/JPS5784171A/ja
Publication of JPS641066B2 publication Critical patent/JPS641066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP55159935A 1980-11-13 1980-11-13 Manufacture of semiconductor substrate Granted JPS5784171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159935A JPS5784171A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159935A JPS5784171A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5784171A true JPS5784171A (en) 1982-05-26
JPS641066B2 JPS641066B2 (enrdf_load_stackoverflow) 1989-01-10

Family

ID=15704363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159935A Granted JPS5784171A (en) 1980-11-13 1980-11-13 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5784171A (enrdf_load_stackoverflow)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840303A (enrdf_load_stackoverflow) * 1971-09-23 1973-06-13
JPS5123073A (en) * 1974-08-21 1976-02-24 Hitachi Ltd Handotaisochino seizoho
JPS5329434A (en) * 1976-08-30 1978-03-18 Toshiba Corp Power limiter for hydraulic power plant
JPS54119883A (en) * 1978-03-10 1979-09-18 Hitachi Ltd Manufacture for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840303A (enrdf_load_stackoverflow) * 1971-09-23 1973-06-13
JPS5123073A (en) * 1974-08-21 1976-02-24 Hitachi Ltd Handotaisochino seizoho
JPS5329434A (en) * 1976-08-30 1978-03-18 Toshiba Corp Power limiter for hydraulic power plant
JPS54119883A (en) * 1978-03-10 1979-09-18 Hitachi Ltd Manufacture for semiconductor device

Also Published As

Publication number Publication date
JPS641066B2 (enrdf_load_stackoverflow) 1989-01-10

Similar Documents

Publication Publication Date Title
ATE27206T1 (de) Verfahren zur herstellung von siliziumoxidschichten.
JPS5331971A (en) Forming method of metal oxide film or semiconductor oxide film
JPS5784171A (en) Manufacture of semiconductor substrate
JPS5494869A (en) Production of semiconductor device
JPS571226A (en) Manufacture of semiconductor substrate with buried diffusion layer
JPS55127016A (en) Manufacturing of semiconductor device
JPS57208182A (en) Manufacture of phtoelectric converter
JPS5656648A (en) Manufacture of semiconductor device
JPS5754333A (ja) Handotaisochitosonoseizohoho
JPS57162467A (en) Manufacture of semiconductor device
JPS5671943A (en) Oxide film coating of compound semiconductor device
JPS5745227A (en) Manufacture of semiconductor device
JPS5651830A (en) Glassivating method for bevel-type semiconductor element
JPS5792872A (en) Diode
JPS55158679A (en) Manufacture of solar cell
JPS5512726A (en) Process for manufacturing semiconductor substrate
JPS5723262A (en) Manufacture of semiconductor device
JPS5710246A (en) Manufacture of semiconductor device
JPS647518A (en) Manufacture of semiconductor device
JPS5643734A (en) Anneal method of polycrystalline silicon thin film
JPS56164551A (en) Manufacture of semiconductor device
JPS5656647A (en) Manufacture of semiconductor device
JPS5759322A (en) Manufacture of semiconductor device
JPS5779641A (en) Manufacture of semiconductor device
JPS57180144A (en) Manufacture of semiconductor device