JPS5783048A - Monograin layer polycrystalline semiconductor resistor - Google Patents
Monograin layer polycrystalline semiconductor resistorInfo
- Publication number
- JPS5783048A JPS5783048A JP15861180A JP15861180A JPS5783048A JP S5783048 A JPS5783048 A JP S5783048A JP 15861180 A JP15861180 A JP 15861180A JP 15861180 A JP15861180 A JP 15861180A JP S5783048 A JPS5783048 A JP S5783048A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- resistor
- conductors
- evaporated
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 9
- 239000013078 crystal Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910001069 Ti alloy Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15861180A JPS5783048A (en) | 1980-11-10 | 1980-11-10 | Monograin layer polycrystalline semiconductor resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15861180A JPS5783048A (en) | 1980-11-10 | 1980-11-10 | Monograin layer polycrystalline semiconductor resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5783048A true JPS5783048A (en) | 1982-05-24 |
| JPS6336152B2 JPS6336152B2 (ja) | 1988-07-19 |
Family
ID=15675484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15861180A Granted JPS5783048A (en) | 1980-11-10 | 1980-11-10 | Monograin layer polycrystalline semiconductor resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783048A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6343379A (ja) * | 1986-08-08 | 1988-02-24 | Nippon Denso Co Ltd | 圧力測定器 |
| JPH03154372A (ja) * | 1989-11-10 | 1991-07-02 | Toshiba Corp | 半導体装置の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02107236U (ja) * | 1989-02-10 | 1990-08-27 |
-
1980
- 1980-11-10 JP JP15861180A patent/JPS5783048A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6343379A (ja) * | 1986-08-08 | 1988-02-24 | Nippon Denso Co Ltd | 圧力測定器 |
| JPH03154372A (ja) * | 1989-11-10 | 1991-07-02 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6336152B2 (ja) | 1988-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1037519A (en) | Electrical circuits | |
| JPS5783048A (en) | Monograin layer polycrystalline semiconductor resistor | |
| JPS5650533A (en) | Semiconductor device | |
| JPS5797647A (en) | Forming of electrode wiring in semiconductor device | |
| JPS5783047A (en) | Polycrystalline semiconductor resistor | |
| JPS57103358A (en) | Manufacture of amorphous silicon mosfet | |
| JPS5766672A (en) | Semiconductor device | |
| JPS5664467A (en) | Mos type semiconductor device | |
| JPS56147434A (en) | Manufacture of semiconductor device | |
| JPS5766671A (en) | Semiconductor device | |
| JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
| JPS5646558A (en) | Semiconductor device | |
| JPS57124429A (en) | Manufacture of semiconductor device | |
| JPS56138946A (en) | Semiconductor device | |
| JPS57126181A (en) | Super conductor element | |
| JPS5734368A (en) | Protective diode for insulated gate field-effect transistor | |
| JPS62281371A (ja) | 薄膜トランジスタとその製造方法 | |
| JPS57100768A (en) | Manufacture of field effect semiconductor device | |
| JPS57190362A (en) | Semiconductor device | |
| JPS57112032A (en) | Formation of insulating film | |
| JPS5515285A (en) | Forming method for indium-antimony thin film | |
| JPS6261364A (ja) | 薄膜半導体装置の製造方法 | |
| JPS55145356A (en) | Fabricating method of semiconductor device | |
| JPS5275189A (en) | Charge transfer device | |
| JPS57100741A (en) | Semiconductor element for reliability evaluation |