JPS577957A - Cmos integrated circuit device - Google Patents

Cmos integrated circuit device

Info

Publication number
JPS577957A
JPS577957A JP8145080A JP8145080A JPS577957A JP S577957 A JPS577957 A JP S577957A JP 8145080 A JP8145080 A JP 8145080A JP 8145080 A JP8145080 A JP 8145080A JP S577957 A JPS577957 A JP S577957A
Authority
JP
Japan
Prior art keywords
output buffer
buffer circuit
circuit
output
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8145080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6360548B2 (enExample
Inventor
Takashi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8145080A priority Critical patent/JPS577957A/ja
Publication of JPS577957A publication Critical patent/JPS577957A/ja
Publication of JPS6360548B2 publication Critical patent/JPS6360548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

Landscapes

  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8145080A 1980-06-18 1980-06-18 Cmos integrated circuit device Granted JPS577957A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8145080A JPS577957A (en) 1980-06-18 1980-06-18 Cmos integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8145080A JPS577957A (en) 1980-06-18 1980-06-18 Cmos integrated circuit device

Publications (2)

Publication Number Publication Date
JPS577957A true JPS577957A (en) 1982-01-16
JPS6360548B2 JPS6360548B2 (enExample) 1988-11-24

Family

ID=13746732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8145080A Granted JPS577957A (en) 1980-06-18 1980-06-18 Cmos integrated circuit device

Country Status (1)

Country Link
JP (1) JPS577957A (enExample)

Also Published As

Publication number Publication date
JPS6360548B2 (enExample) 1988-11-24

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