JPS5487115A - Automatic clear circuit - Google Patents

Automatic clear circuit

Info

Publication number
JPS5487115A
JPS5487115A JP15448677A JP15448677A JPS5487115A JP S5487115 A JPS5487115 A JP S5487115A JP 15448677 A JP15448677 A JP 15448677A JP 15448677 A JP15448677 A JP 15448677A JP S5487115 A JPS5487115 A JP S5487115A
Authority
JP
Japan
Prior art keywords
misfetq1
automatic clear
enhancement type
depletion type
malfunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15448677A
Other languages
Japanese (ja)
Other versions
JPS6019011B2 (en
Inventor
Eiichiro Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52154486A priority Critical patent/JPS6019011B2/en
Publication of JPS5487115A publication Critical patent/JPS5487115A/en
Publication of JPS6019011B2 publication Critical patent/JPS6019011B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the malfunction of automatic clear operation by providing the pull up depletion type MIS FET high resistor located between the gates and the power supply terminals of the enhancement type MISFETQ2 and MISFETQ1.
CONSTITUTION: The voltage division circuit by depletion type MISFET or diffusion resistor and the source follower circuit taking the enhancement type MISFETQ1 as drive means are provided. Further, the enhancement type MISFETQ2 connected to the diode in forward connection between the voltage dividing output and the gate of MISFETQ1 and the high resistor for pull up depletion type MISFETQ located between the gate of MISFETQ1 and the power supply Vdd terminal, are located. Thus, the source follower output Vo is used as the reference signal to form automatic clear signal, allowing to prevent the malfunction of automatic clear operation.
COPYRIGHT: (C)1979,JPO&Japio
JP52154486A 1977-12-23 1977-12-23 auto clear circuit Expired JPS6019011B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52154486A JPS6019011B2 (en) 1977-12-23 1977-12-23 auto clear circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52154486A JPS6019011B2 (en) 1977-12-23 1977-12-23 auto clear circuit

Publications (2)

Publication Number Publication Date
JPS5487115A true JPS5487115A (en) 1979-07-11
JPS6019011B2 JPS6019011B2 (en) 1985-05-14

Family

ID=15585288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52154486A Expired JPS6019011B2 (en) 1977-12-23 1977-12-23 auto clear circuit

Country Status (1)

Country Link
JP (1) JPS6019011B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180216A (en) * 1984-02-28 1985-09-14 Fujitsu Ltd Voltage detecting circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180216A (en) * 1984-02-28 1985-09-14 Fujitsu Ltd Voltage detecting circuit

Also Published As

Publication number Publication date
JPS6019011B2 (en) 1985-05-14

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