JPS577923A - Manufacture of receiving table for processing single silicon crystal wafer - Google Patents

Manufacture of receiving table for processing single silicon crystal wafer

Info

Publication number
JPS577923A
JPS577923A JP8242780A JP8242780A JPS577923A JP S577923 A JPS577923 A JP S577923A JP 8242780 A JP8242780 A JP 8242780A JP 8242780 A JP8242780 A JP 8242780A JP S577923 A JPS577923 A JP S577923A
Authority
JP
Japan
Prior art keywords
receiving table
processing
wafers
manufacture
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8242780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6243333B2 (enrdf_load_html_response
Inventor
Takashi Tanaka
Toshiaki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP8242780A priority Critical patent/JPS577923A/ja
Publication of JPS577923A publication Critical patent/JPS577923A/ja
Publication of JPS6243333B2 publication Critical patent/JPS6243333B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP8242780A 1980-06-18 1980-06-18 Manufacture of receiving table for processing single silicon crystal wafer Granted JPS577923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8242780A JPS577923A (en) 1980-06-18 1980-06-18 Manufacture of receiving table for processing single silicon crystal wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8242780A JPS577923A (en) 1980-06-18 1980-06-18 Manufacture of receiving table for processing single silicon crystal wafer

Publications (2)

Publication Number Publication Date
JPS577923A true JPS577923A (en) 1982-01-16
JPS6243333B2 JPS6243333B2 (enrdf_load_html_response) 1987-09-12

Family

ID=13774278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8242780A Granted JPS577923A (en) 1980-06-18 1980-06-18 Manufacture of receiving table for processing single silicon crystal wafer

Country Status (1)

Country Link
JP (1) JPS577923A (enrdf_load_html_response)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194904A (ja) * 1986-02-20 1987-08-27 Bridgestone Corp 重荷重用空気入りラジアルタイヤ
JPS62283002A (ja) * 1986-02-20 1987-12-08 Bridgestone Corp 重荷重用空気入りラジアルタイヤ
JPH0590184A (ja) * 1991-09-27 1993-04-09 Mitsui Eng & Shipbuild Co Ltd 半導体拡散炉用ウエハボートの製造方法
US5443649A (en) * 1994-11-22 1995-08-22 Sibley; Thomas Silicon carbide carrier for wafer processing in vertical furnaces
US5776391A (en) * 1994-08-08 1998-07-07 Sibley; Thomas Silicon carbide carrier for wafer processing and method for making same
WO2020174725A1 (ja) * 2019-02-28 2020-09-03 株式会社アドマップ ＳｉＣ膜構造体
KR20230159467A (ko) 2021-03-23 2023-11-21 도쿄엘렉트론가부시키가이샤 반도체 제조 장치 및 반도체 제조 장치용의 부품

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194904A (ja) * 1986-02-20 1987-08-27 Bridgestone Corp 重荷重用空気入りラジアルタイヤ
JPS62283002A (ja) * 1986-02-20 1987-12-08 Bridgestone Corp 重荷重用空気入りラジアルタイヤ
JPH0590184A (ja) * 1991-09-27 1993-04-09 Mitsui Eng & Shipbuild Co Ltd 半導体拡散炉用ウエハボートの製造方法
US5776391A (en) * 1994-08-08 1998-07-07 Sibley; Thomas Silicon carbide carrier for wafer processing and method for making same
US5443649A (en) * 1994-11-22 1995-08-22 Sibley; Thomas Silicon carbide carrier for wafer processing in vertical furnaces
WO2020174725A1 (ja) * 2019-02-28 2020-09-03 株式会社アドマップ ＳｉＣ膜構造体
US10804096B2 (en) 2019-02-28 2020-10-13 Admap Inc. SiC film structure and method for manufacturing SiC film structure
US11508570B2 (en) 2019-02-28 2022-11-22 Admap Inc. SiC film structure
KR20230159467A (ko) 2021-03-23 2023-11-21 도쿄엘렉트론가부시키가이샤 반도체 제조 장치 및 반도체 제조 장치용의 부품

Also Published As

Publication number Publication date
JPS6243333B2 (enrdf_load_html_response) 1987-09-12

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