JPS6243333B2 - - Google Patents
Info
- Publication number
- JPS6243333B2 JPS6243333B2 JP8242780A JP8242780A JPS6243333B2 JP S6243333 B2 JPS6243333 B2 JP S6243333B2 JP 8242780 A JP8242780 A JP 8242780A JP 8242780 A JP8242780 A JP 8242780A JP S6243333 B2 JPS6243333 B2 JP S6243333B2
- Authority
- JP
- Japan
- Prior art keywords
- base material
- pedestal
- single crystal
- semiconductor material
- graphite base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910002804 graphite Inorganic materials 0.000 claims description 15
- 239000010439 graphite Substances 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 16
- 238000003754 machining Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 230000006378 damage Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8242780A JPS577923A (en) | 1980-06-18 | 1980-06-18 | Manufacture of receiving table for processing single silicon crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8242780A JPS577923A (en) | 1980-06-18 | 1980-06-18 | Manufacture of receiving table for processing single silicon crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577923A JPS577923A (en) | 1982-01-16 |
| JPS6243333B2 true JPS6243333B2 (enrdf_load_html_response) | 1987-09-12 |
Family
ID=13774278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8242780A Granted JPS577923A (en) | 1980-06-18 | 1980-06-18 | Manufacture of receiving table for processing single silicon crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577923A (enrdf_load_html_response) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62283002A (ja) * | 1986-02-20 | 1987-12-08 | Bridgestone Corp | 重荷重用空気入りラジアルタイヤ |
| JPS62194904A (ja) * | 1986-02-20 | 1987-08-27 | Bridgestone Corp | 重荷重用空気入りラジアルタイヤ |
| JP2701615B2 (ja) * | 1991-09-27 | 1998-01-21 | 三井造船株式会社 | 半導体拡散炉用ウェハボートの製造方法 |
| US5538230A (en) * | 1994-08-08 | 1996-07-23 | Sibley; Thomas | Silicon carbide carrier for wafer processing |
| US5443649A (en) * | 1994-11-22 | 1995-08-22 | Sibley; Thomas | Silicon carbide carrier for wafer processing in vertical furnaces |
| JP6550198B1 (ja) * | 2019-02-28 | 2019-07-24 | 株式会社アドマップ | ＳｉＣ膜構造体 |
| WO2022202364A1 (ja) | 2021-03-23 | 2022-09-29 | 東京エレクトロン株式会社 | 半導体製造装置及び半導体製造装置用の部品 |
-
1980
- 1980-06-18 JP JP8242780A patent/JPS577923A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS577923A (en) | 1982-01-16 |
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