JPS5773976A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS5773976A JPS5773976A JP55149407A JP14940780A JPS5773976A JP S5773976 A JPS5773976 A JP S5773976A JP 55149407 A JP55149407 A JP 55149407A JP 14940780 A JP14940780 A JP 14940780A JP S5773976 A JPS5773976 A JP S5773976A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- gate
- mos transistor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 2
- 230000002411 adverse Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55149407A JPS5773976A (en) | 1980-10-27 | 1980-10-27 | Mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55149407A JPS5773976A (en) | 1980-10-27 | 1980-10-27 | Mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5773976A true JPS5773976A (en) | 1982-05-08 |
Family
ID=15474446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55149407A Pending JPS5773976A (en) | 1980-10-27 | 1980-10-27 | Mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5773976A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58202574A (ja) * | 1982-05-21 | 1983-11-25 | Mitsubishi Electric Corp | Mosトランジスタ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5354486A (en) * | 1976-10-27 | 1978-05-17 | Nec Corp | Output protecting circuit of integrated circuit device |
JPS53145486A (en) * | 1977-05-24 | 1978-12-18 | Mitsubishi Electric Corp | Protecting circuit using insulated gate field effect type transistors |
-
1980
- 1980-10-27 JP JP55149407A patent/JPS5773976A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5354486A (en) * | 1976-10-27 | 1978-05-17 | Nec Corp | Output protecting circuit of integrated circuit device |
JPS53145486A (en) * | 1977-05-24 | 1978-12-18 | Mitsubishi Electric Corp | Protecting circuit using insulated gate field effect type transistors |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58202574A (ja) * | 1982-05-21 | 1983-11-25 | Mitsubishi Electric Corp | Mosトランジスタ |
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