JPS5771568A - Marking method of bubble meory wafer - Google Patents

Marking method of bubble meory wafer

Info

Publication number
JPS5771568A
JPS5771568A JP14783380A JP14783380A JPS5771568A JP S5771568 A JPS5771568 A JP S5771568A JP 14783380 A JP14783380 A JP 14783380A JP 14783380 A JP14783380 A JP 14783380A JP S5771568 A JPS5771568 A JP S5771568A
Authority
JP
Japan
Prior art keywords
wafer
ion
discriminating
injected
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14783380A
Other languages
Japanese (ja)
Inventor
Tomoyuki Mori
Shunsuke Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14783380A priority Critical patent/JPS5771568A/en
Publication of JPS5771568A publication Critical patent/JPS5771568A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure

Landscapes

  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To easily form a discriminating symbol for controlling a wafer, by making a mask having a slotted discriminating sumbol adhere tightly to an unnecessary part of the wafer, when forming an ion injection layer on a magnetic thin film layer of a bubble memory wafer. CONSTITUTION:In the manufacturing process of a bubble memory chip, when forming an ion injection layer on a magnetic thin film layer of a bubble memory wafer 1, a mask 2 consisting of an aluminum plate to which a discriminating symbol has been slotted is made to tightly adhere to an unnecessary position of the edge part of the wafer 1, and an ion is injected. As a result, as for a place 4 to which the ion has been injected, its garnet film color becomes dark, comparing with a place 5 to which no ion has been injected, therefore, the discriminating symbol can be discriminated easily. Accordingly, such a processing process as forming a discriminating symbol by means of engraving or applying a resist is omitted.
JP14783380A 1980-10-22 1980-10-22 Marking method of bubble meory wafer Pending JPS5771568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14783380A JPS5771568A (en) 1980-10-22 1980-10-22 Marking method of bubble meory wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14783380A JPS5771568A (en) 1980-10-22 1980-10-22 Marking method of bubble meory wafer

Publications (1)

Publication Number Publication Date
JPS5771568A true JPS5771568A (en) 1982-05-04

Family

ID=15439270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14783380A Pending JPS5771568A (en) 1980-10-22 1980-10-22 Marking method of bubble meory wafer

Country Status (1)

Country Link
JP (1) JPS5771568A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5189386A (en) * 1975-02-03 1976-08-05 Handotaisochi oyobi sonoseizohoho
JPS5438764A (en) * 1977-09-01 1979-03-23 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5189386A (en) * 1975-02-03 1976-08-05 Handotaisochi oyobi sonoseizohoho
JPS5438764A (en) * 1977-09-01 1979-03-23 Nec Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5771568A (en) Marking method of bubble meory wafer
JPS55157737A (en) Resist pattern forming method for photofabrication
JPS57176040A (en) Preparation of photomask
JPS6424425A (en) Formation of tapered pattern
JPS56144536A (en) Pattern formation and p-n junction formation
JPS53147531A (en) Forming method for thin film pattern
JPS5222598A (en) Etching method of chromium oxide
JPS5764913A (en) Manufacture of magnetic bubble memory elemebt
JPS572526A (en) Forming method for pattern of sputter film
JPS5516462A (en) Method of forming contiguous pattern
JPS5669814A (en) Manufacture of magnetic bubble memory element
JPS522598A (en) Manufacturing method of card and the card
JPS6484406A (en) Manufacture of thin film magnetic head
JPS5326575A (en) Ion etching method
JPS5764920A (en) Manufacture of gaas integrated circuit
JPS5654039A (en) Forming method for fine pattern
JPS5516463A (en) Bulb magnetic region element
JPS56169309A (en) Magnetic thin film material
JPS56167329A (en) Piling joint setting mark to be used in fine processing exposure technology
JPS57115832A (en) Resist pattern formation for fine processing
JPS57149782A (en) Electrode formation for magnetic resistance element
JPS57153435A (en) Manufacture of semiconductor device
JPS5496370A (en) Mask forming method
JPS5740929A (en) Processing method of resist
JPS56167328A (en) Manufacture of semiconductor device