JPS577154A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS577154A
JPS577154A JP8117580A JP8117580A JPS577154A JP S577154 A JPS577154 A JP S577154A JP 8117580 A JP8117580 A JP 8117580A JP 8117580 A JP8117580 A JP 8117580A JP S577154 A JPS577154 A JP S577154A
Authority
JP
Japan
Prior art keywords
substrate
layer
oxide film
film
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8117580A
Other languages
English (en)
Other versions
JPS6046546B2 (ja
Inventor
Katsuhiko Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55081175A priority Critical patent/JPS6046546B2/ja
Publication of JPS577154A publication Critical patent/JPS577154A/ja
Publication of JPS6046546B2 publication Critical patent/JPS6046546B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP55081175A 1980-06-16 1980-06-16 半導体装置の製造方法 Expired JPS6046546B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55081175A JPS6046546B2 (ja) 1980-06-16 1980-06-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55081175A JPS6046546B2 (ja) 1980-06-16 1980-06-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS577154A true JPS577154A (en) 1982-01-14
JPS6046546B2 JPS6046546B2 (ja) 1985-10-16

Family

ID=13739121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55081175A Expired JPS6046546B2 (ja) 1980-06-16 1980-06-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6046546B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983003923A1 (en) * 1982-04-23 1983-11-10 Western Electric Company, Inc. Semiconductor integrated circuit structures having insulated conductors
US4985373A (en) * 1982-04-23 1991-01-15 At&T Bell Laboratories Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983003923A1 (en) * 1982-04-23 1983-11-10 Western Electric Company, Inc. Semiconductor integrated circuit structures having insulated conductors
US4985373A (en) * 1982-04-23 1991-01-15 At&T Bell Laboratories Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures

Also Published As

Publication number Publication date
JPS6046546B2 (ja) 1985-10-16

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