JPS5771181A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5771181A
JPS5771181A JP14799380A JP14799380A JPS5771181A JP S5771181 A JPS5771181 A JP S5771181A JP 14799380 A JP14799380 A JP 14799380A JP 14799380 A JP14799380 A JP 14799380A JP S5771181 A JPS5771181 A JP S5771181A
Authority
JP
Japan
Prior art keywords
film
type
oxide film
region
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14799380A
Other languages
Japanese (ja)
Inventor
Osamu Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14799380A priority Critical patent/JPS5771181A/en
Publication of JPS5771181A publication Critical patent/JPS5771181A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To avoid a variation of impurity density distribution in a diffusion region, by forming a gate insulation film with a use of nitrogen or ammonia in the first process prior to impurity diffusion region formation, at the time of forming a gate insulation film of nitride on a semiconductor substrate. CONSTITUTION:A thin direct heat nitride film 102 is grown on both surfaces of a p type Si-substrate 101 by direct reaction with ammonia purified at 1,100 deg.C. The films 102 on both sides in an inactive region are removed by means of photoetching. Next, p type impurity ions are injected into the inactive region. A p<+> type channel stopper region 103 is formed, and is covered with a thick field oxide film 104. An oxide film is formed on the remaining nitride film 102. Afterwards, the oxide film on the back side is removed and a gate electrode 106 is formed on the oxide film 105 with a polycrystalline Si-film doped with n type impurity. An n<+> type source- drain region 107 is formed within the substrate 101 under the film 102 by injecting n type impurity ion in a self alignment manner.
JP14799380A 1980-10-22 1980-10-22 Manufacture of semiconductor device Pending JPS5771181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14799380A JPS5771181A (en) 1980-10-22 1980-10-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14799380A JPS5771181A (en) 1980-10-22 1980-10-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5771181A true JPS5771181A (en) 1982-05-01

Family

ID=15442721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14799380A Pending JPS5771181A (en) 1980-10-22 1980-10-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771181A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5837378A (en) * 1995-09-12 1998-11-17 Micron Technology, Inc. Method of reducing stress-induced defects in silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5837378A (en) * 1995-09-12 1998-11-17 Micron Technology, Inc. Method of reducing stress-induced defects in silicon

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