JPS5768031A - Axis aligning mechanism for electron beam exposure device - Google Patents

Axis aligning mechanism for electron beam exposure device

Info

Publication number
JPS5768031A
JPS5768031A JP14394680A JP14394680A JPS5768031A JP S5768031 A JPS5768031 A JP S5768031A JP 14394680 A JP14394680 A JP 14394680A JP 14394680 A JP14394680 A JP 14394680A JP S5768031 A JPS5768031 A JP S5768031A
Authority
JP
Japan
Prior art keywords
aperture
axis aligning
lens
electron beam
illuminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14394680A
Other languages
Japanese (ja)
Inventor
Mamoru Nakasuji
Kanji Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14394680A priority Critical patent/JPS5768031A/en
Priority to US06/309,780 priority patent/US4543512A/en
Priority to DE8181108089T priority patent/DE3172441D1/en
Priority to EP81108089A priority patent/EP0049872B1/en
Priority to DD81234113A priority patent/DD201953A5/en
Publication of JPS5768031A publication Critical patent/JPS5768031A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To accurately correct th axial displacement of a crossover while stabilizing the beam intensity by providing an axis aligning coil above an aperture to maximize the quantity of electron beam passing through the aperture formed at the position of a crossover image formed by an electron gun. CONSTITUTION:An electron beam from an electron gun 1 is focused through axis aligning coils 4a, 4b via a condenser lens 2 to illuminate the first beam shaping aperture 3, is then focused via a projection lens 5 to illuminate the second beam shaping aperture 6. Then, contraction lens 7 is used to introduce the beam to an objective lens 8 to illuminate the aperture image of the beam on the surface of a speciment via a circular the aperture 9. With this construction the lens 7 is interposed above the aperture 9, two axis aligning coils 16, 17 are provided to detect the quantity of electron beam passed through the aperture 9 by a Faraday cup 10. Thereafter, the output is applied through an amplifier 11, a waveform memory device 12 and a controlling computer 13 to an axis aligning coil power source 14, thereby controlling the coils 16, 17.
JP14394680A 1980-10-15 1980-10-15 Axis aligning mechanism for electron beam exposure device Pending JPS5768031A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14394680A JPS5768031A (en) 1980-10-15 1980-10-15 Axis aligning mechanism for electron beam exposure device
US06/309,780 US4543512A (en) 1980-10-15 1981-10-08 Electron beam exposure system
DE8181108089T DE3172441D1 (en) 1980-10-15 1981-10-08 Electron beam exposure system
EP81108089A EP0049872B1 (en) 1980-10-15 1981-10-08 Electron beam exposure system
DD81234113A DD201953A5 (en) 1980-10-15 1981-10-15 ELECTRON EXPOSURE SYSTEM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14394680A JPS5768031A (en) 1980-10-15 1980-10-15 Axis aligning mechanism for electron beam exposure device

Publications (1)

Publication Number Publication Date
JPS5768031A true JPS5768031A (en) 1982-04-26

Family

ID=15350725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14394680A Pending JPS5768031A (en) 1980-10-15 1980-10-15 Axis aligning mechanism for electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS5768031A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57191676A (en) * 1981-05-21 1982-11-25 Fujitsu Ltd El display device
JPS61294750A (en) * 1985-06-24 1986-12-25 Toshiba Corp Charged beam lithography equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57191676A (en) * 1981-05-21 1982-11-25 Fujitsu Ltd El display device
JPS61294750A (en) * 1985-06-24 1986-12-25 Toshiba Corp Charged beam lithography equipment

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