JPS5694737A - Electronic beam exposure device - Google Patents

Electronic beam exposure device

Info

Publication number
JPS5694737A
JPS5694737A JP17105779A JP17105779A JPS5694737A JP S5694737 A JPS5694737 A JP S5694737A JP 17105779 A JP17105779 A JP 17105779A JP 17105779 A JP17105779 A JP 17105779A JP S5694737 A JPS5694737 A JP S5694737A
Authority
JP
Japan
Prior art keywords
predeflector
magnetic field
main deflector
lens
projection lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17105779A
Other languages
Japanese (ja)
Inventor
Hiroshi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17105779A priority Critical patent/JPS5694737A/en
Publication of JPS5694737A publication Critical patent/JPS5694737A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain an electronic beam exposure device in which a deflection aberration, distortion, focus, stigma as well as an electron mutual action are reduced by a method wherein a main deflector is installed within a magnetic field of a projection lens and a predeflector is installed in a magnetic field of a reduction lens. CONSTITUTION:A projection lens 11 is installed near a wafer 10 and at this side thereof, a reduction lens 12 is installed. A main deflector 13 is installed at a position included in a magnetic field of the projection lens 11 and a predeflector 14 is installed at a position included in the magnetic field of the reduction lens 12. The main deflector 13 and the predeflector 14 are connected in series and they are controlled through an amplifier. Since the main deflector 13 and the predeflector are installed distance as far as the distance between the projection lens 11 and the reduction lens 12, the deflection aberration becomes zero and the distortion, focus and stima are reduced, too. And further, a focus obscurity due to the electron mutual action can be reduced.
JP17105779A 1979-12-28 1979-12-28 Electronic beam exposure device Pending JPS5694737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17105779A JPS5694737A (en) 1979-12-28 1979-12-28 Electronic beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17105779A JPS5694737A (en) 1979-12-28 1979-12-28 Electronic beam exposure device

Publications (1)

Publication Number Publication Date
JPS5694737A true JPS5694737A (en) 1981-07-31

Family

ID=15916264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17105779A Pending JPS5694737A (en) 1979-12-28 1979-12-28 Electronic beam exposure device

Country Status (1)

Country Link
JP (1) JPS5694737A (en)

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