JPS5761694A - Preparation of semiconductor crystal - Google Patents

Preparation of semiconductor crystal

Info

Publication number
JPS5761694A
JPS5761694A JP13788280A JP13788280A JPS5761694A JP S5761694 A JPS5761694 A JP S5761694A JP 13788280 A JP13788280 A JP 13788280A JP 13788280 A JP13788280 A JP 13788280A JP S5761694 A JPS5761694 A JP S5761694A
Authority
JP
Japan
Prior art keywords
crystal
ampule
raw material
rod
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13788280A
Other languages
Japanese (ja)
Inventor
Yoshio Kawabata
Kouji Shinohara
Yoshito Nishijima
Hirokazu Fukuda
Kosaku Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13788280A priority Critical patent/JPS5761694A/en
Publication of JPS5761694A publication Critical patent/JPS5761694A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To shorten the length of the uniformly heating zone of a furnace for heating a sealed vessel containing the raw material of the semiconductor crystal, by melting and solidifying the raw material to a desired shape before placing in the vessel.
CONSTITUTION: For example, in the preparation of a crystal for semiconductor laser element, the desired amount of a Te or Pb block is placed in the cavity 12 of a carbon plate 11 used as a jig. The shape of the inner surface of the cavity 12 coincides at least partly with that of the vessel in which the crystal raw material is to be sealed. The jig is inserted in a quarts tube having H2 atmosphere, held in the horizontal position, molten by heating the quartz tube, and solidified by cooling the furnace. A Pb or Te rod 13 is obtained by this procedure. The Pb rod 21 and the Te rod 22 are inserted into a quartz ampule facing each other, the end of the ampule B is sealed off, the ampule is inserted in a quartz tube, and both rods are again molten and solidified to obtain a single crystal.
COPYRIGHT: (C)1982,JPO&Japio
JP13788280A 1980-09-30 1980-09-30 Preparation of semiconductor crystal Pending JPS5761694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13788280A JPS5761694A (en) 1980-09-30 1980-09-30 Preparation of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13788280A JPS5761694A (en) 1980-09-30 1980-09-30 Preparation of semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5761694A true JPS5761694A (en) 1982-04-14

Family

ID=15208885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13788280A Pending JPS5761694A (en) 1980-09-30 1980-09-30 Preparation of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5761694A (en)

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