JPS5758338A - Semiconductor integrated device - Google Patents
Semiconductor integrated deviceInfo
- Publication number
- JPS5758338A JPS5758338A JP13305780A JP13305780A JPS5758338A JP S5758338 A JPS5758338 A JP S5758338A JP 13305780 A JP13305780 A JP 13305780A JP 13305780 A JP13305780 A JP 13305780A JP S5758338 A JPS5758338 A JP S5758338A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- wires
- groove
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13305780A JPS5758338A (en) | 1980-09-26 | 1980-09-26 | Semiconductor integrated device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13305780A JPS5758338A (en) | 1980-09-26 | 1980-09-26 | Semiconductor integrated device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5758338A true JPS5758338A (en) | 1982-04-08 |
| JPS6262466B2 JPS6262466B2 (enrdf_load_stackoverflow) | 1987-12-26 |
Family
ID=15095808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13305780A Granted JPS5758338A (en) | 1980-09-26 | 1980-09-26 | Semiconductor integrated device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5758338A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58218141A (ja) * | 1982-06-11 | 1983-12-19 | Hitachi Ltd | 高耐圧半導体集積装置 |
| JPS6095939A (ja) * | 1983-10-31 | 1985-05-29 | Matsushita Electronics Corp | 半導体集積回路の製造方法 |
| US4923820A (en) * | 1985-09-18 | 1990-05-08 | Harris Corporation | IC which eliminates support bias influence on dielectrically isolated components |
| JPH053192A (ja) * | 1991-10-25 | 1993-01-08 | Matsushita Electron Corp | 半導体集積回路 |
| US5426073A (en) * | 1988-10-07 | 1995-06-20 | Fujitsu Limited | Method of fabricating semiconductor devices using an intermediate grinding step |
-
1980
- 1980-09-26 JP JP13305780A patent/JPS5758338A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58218141A (ja) * | 1982-06-11 | 1983-12-19 | Hitachi Ltd | 高耐圧半導体集積装置 |
| JPS6095939A (ja) * | 1983-10-31 | 1985-05-29 | Matsushita Electronics Corp | 半導体集積回路の製造方法 |
| US4923820A (en) * | 1985-09-18 | 1990-05-08 | Harris Corporation | IC which eliminates support bias influence on dielectrically isolated components |
| US5426073A (en) * | 1988-10-07 | 1995-06-20 | Fujitsu Limited | Method of fabricating semiconductor devices using an intermediate grinding step |
| JPH053192A (ja) * | 1991-10-25 | 1993-01-08 | Matsushita Electron Corp | 半導体集積回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6262466B2 (enrdf_load_stackoverflow) | 1987-12-26 |
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