JPS5758317A - Method for forming pattern - Google Patents
Method for forming patternInfo
- Publication number
- JPS5758317A JPS5758317A JP55132583A JP13258380A JPS5758317A JP S5758317 A JPS5758317 A JP S5758317A JP 55132583 A JP55132583 A JP 55132583A JP 13258380 A JP13258380 A JP 13258380A JP S5758317 A JPS5758317 A JP S5758317A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ultraviolet ray
- far ultraviolet
- reduced
- mask pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55132583A JPS5758317A (en) | 1980-09-24 | 1980-09-24 | Method for forming pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55132583A JPS5758317A (en) | 1980-09-24 | 1980-09-24 | Method for forming pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5758317A true JPS5758317A (en) | 1982-04-08 |
Family
ID=15084722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55132583A Pending JPS5758317A (en) | 1980-09-24 | 1980-09-24 | Method for forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5758317A (ja) |
-
1980
- 1980-09-24 JP JP55132583A patent/JPS5758317A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5339075A (en) | Step and repeat exposure method of masks | |
| EP0098922A3 (en) | Process for selectively generating positive and negative resist patterns from a single exposure pattern | |
| JPS5758317A (en) | Method for forming pattern | |
| JPS5494881A (en) | Exposure method | |
| JPS55157737A (en) | Resist pattern forming method for photofabrication | |
| JPS57100428A (en) | Method for photomechanical process | |
| JPS5461931A (en) | Forming method of photo resist patterns | |
| JPS55135837A (en) | Manufacture of photomask | |
| JPS54141573A (en) | Mask for exposure | |
| JPS5339060A (en) | Lot number marking method to wafers | |
| JPS53135578A (en) | Mark protection method | |
| JPS57198632A (en) | Fine pattern formation | |
| JPS6421450A (en) | Production of mask | |
| JPS53147531A (en) | Forming method for thin film pattern | |
| GB1283898A (en) | Etching process | |
| JPS5387668A (en) | Forming method of patterns | |
| JPS5646230A (en) | Exposing method | |
| EP0136534A3 (en) | Method of forming a large surface area integrated circuit | |
| JPS57176040A (en) | Preparation of photomask | |
| JPS5743425A (en) | Forming method for fine pattern | |
| JPS5655950A (en) | Photographic etching method | |
| JPS57102015A (en) | Pattern formation | |
| JPS53105982A (en) | Micropattern formation method | |
| JPS56167329A (en) | Piling joint setting mark to be used in fine processing exposure technology | |
| JPS5656633A (en) | Manufacture of semiconductor element |