JPS5756971A - High speed operation type semiconductor device - Google Patents

High speed operation type semiconductor device

Info

Publication number
JPS5756971A
JPS5756971A JP55131134A JP13113480A JPS5756971A JP S5756971 A JPS5756971 A JP S5756971A JP 55131134 A JP55131134 A JP 55131134A JP 13113480 A JP13113480 A JP 13113480A JP S5756971 A JPS5756971 A JP S5756971A
Authority
JP
Japan
Prior art keywords
region
layer
transistor
type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55131134A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6235274B2 (enrdf_load_stackoverflow
Inventor
Yasuhisa Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55131134A priority Critical patent/JPS5756971A/ja
Publication of JPS5756971A publication Critical patent/JPS5756971A/ja
Publication of JPS6235274B2 publication Critical patent/JPS6235274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP55131134A 1980-09-20 1980-09-20 High speed operation type semiconductor device Granted JPS5756971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55131134A JPS5756971A (en) 1980-09-20 1980-09-20 High speed operation type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55131134A JPS5756971A (en) 1980-09-20 1980-09-20 High speed operation type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5756971A true JPS5756971A (en) 1982-04-05
JPS6235274B2 JPS6235274B2 (enrdf_load_stackoverflow) 1987-07-31

Family

ID=15050775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55131134A Granted JPS5756971A (en) 1980-09-20 1980-09-20 High speed operation type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5756971A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095348A (en) * 1989-10-02 1992-03-10 Texas Instruments Incorporated Semiconductor on insulator transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095348A (en) * 1989-10-02 1992-03-10 Texas Instruments Incorporated Semiconductor on insulator transistor

Also Published As

Publication number Publication date
JPS6235274B2 (enrdf_load_stackoverflow) 1987-07-31

Similar Documents

Publication Publication Date Title
JPS5754370A (en) Insulating gate type transistor
JPS55133574A (en) Insulated gate field effect transistor
JPS5681972A (en) Mos type field effect transistor
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5756971A (en) High speed operation type semiconductor device
JPS5768073A (en) Field effect transistor
JPS5691477A (en) Semiconductor
JPS54156483A (en) Non-volatile semiconductor memory device
JPS52100979A (en) Production and drive of dual gate schottky barrier gate type fieled ef fect transistor
JPS56155531A (en) Manufacture of semiconductor device
JPS55140270A (en) Insulated gate transistor
JPS5522879A (en) Insulation gate type field effect semiconductor device
JPS57166067A (en) Bias generating unit for substrate
JPS54114984A (en) Semiconductor device
JPS57130469A (en) Mis type semiconductor device
JPS56165358A (en) Semiconductor device
JPS5756972A (en) Low power type semiconductor device
JPS5688366A (en) Semiconductor device
JPS56147467A (en) Cmos semiconductor device and manufacture thereof
JPS57170570A (en) Field effect transistor
JPS6461060A (en) Semiconductor device
JPS52147983A (en) Insulation gate type semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5522880A (en) Manufacturing method of insulation gate type field effect semiconductor device
JPS57197869A (en) Semiconductor device