JPS6235274B2 - - Google Patents

Info

Publication number
JPS6235274B2
JPS6235274B2 JP55131134A JP13113480A JPS6235274B2 JP S6235274 B2 JPS6235274 B2 JP S6235274B2 JP 55131134 A JP55131134 A JP 55131134A JP 13113480 A JP13113480 A JP 13113480A JP S6235274 B2 JPS6235274 B2 JP S6235274B2
Authority
JP
Japan
Prior art keywords
active layer
region
conductivity type
anode
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55131134A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5756971A (en
Inventor
Yasuhisa Oomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55131134A priority Critical patent/JPS5756971A/ja
Publication of JPS5756971A publication Critical patent/JPS5756971A/ja
Publication of JPS6235274B2 publication Critical patent/JPS6235274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP55131134A 1980-09-20 1980-09-20 High speed operation type semiconductor device Granted JPS5756971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55131134A JPS5756971A (en) 1980-09-20 1980-09-20 High speed operation type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55131134A JPS5756971A (en) 1980-09-20 1980-09-20 High speed operation type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5756971A JPS5756971A (en) 1982-04-05
JPS6235274B2 true JPS6235274B2 (enrdf_load_stackoverflow) 1987-07-31

Family

ID=15050775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55131134A Granted JPS5756971A (en) 1980-09-20 1980-09-20 High speed operation type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5756971A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095348A (en) * 1989-10-02 1992-03-10 Texas Instruments Incorporated Semiconductor on insulator transistor

Also Published As

Publication number Publication date
JPS5756971A (en) 1982-04-05

Similar Documents

Publication Publication Date Title
JPS623989B2 (enrdf_load_stackoverflow)
US3356858A (en) Low stand-by power complementary field effect circuitry
KR102425131B1 (ko) 그래핀 트랜지스터 및 이를 이용한 3진 논리 소자
CN101361189B (zh) 高性能fet器件和方法
JPH077826B2 (ja) 半導体集積回路
US3999207A (en) Field effect transistor with a carrier injecting region
US3250967A (en) Solid state triode
JPS6235274B2 (enrdf_load_stackoverflow)
US3493824A (en) Insulated-gate field effect transistors utilizing a high resistivity substrate
JP5529514B2 (ja) 半導体装置
JPS6235275B2 (enrdf_load_stackoverflow)
JPS6241428B2 (enrdf_load_stackoverflow)
US20250254905A1 (en) Trench-shaped ternary cmos device
JPS626670B2 (enrdf_load_stackoverflow)
KR102167018B1 (ko) 나노선 트랜지스터 및 이를 포함하는 다치 논리 소자
JPH0612821B2 (ja) 半導体装置
US4937640A (en) Short channel MOSFET
US3454795A (en) Semiconductive field-controlled diode device
JPH0475669B2 (enrdf_load_stackoverflow)
JPH0468792B2 (enrdf_load_stackoverflow)
JP2982049B2 (ja) 絶縁ゲート型静電誘導トランジスタ
JPH0131314B2 (enrdf_load_stackoverflow)
US20110095375A1 (en) Mim transistor
JPH0695531B2 (ja) 電界効果型トランジスタ
JP2911159B2 (ja) 半導体装置